Twitter Integration of Chemistry Software Tools

<div>Social media activity on a research article is considered to be an altmetric, a new measure to estimate research impact. Demonstrating software on Twitter is a powerful way to attract attention from a larger audience. SNS integration of software can also lower the barriers to trying the tools and make it easier to save and share the output. We present three case studies of Twitter bots for cheminformatics: retrosynthetic analysis, 3D molecule viewer, and 2D chemical structure editor. These bots make software research more accessible to a broader range of people and facilitate the sharing of chemical knowledge, concepts, and ideas.</div>

Twitter Integration of Chemistry Software Tools

<div>Social media activity on a research article is considered to be an altmetric, a new measure to estimate research impact. Demonstrating software on Twitter is a powerful way to attract attention from a larger audience. SNS integration of software can also lower the barriers to trying the tools and make it easier to save and share the output. We present three case studies of Twitter bots for cheminformatics: retrosynthetic analysis, 3D molecule viewer, and 2D chemical structure editor. These bots make software research more accessible to a broader range of people and facilitate the sharing of chemical knowledge, concepts, and ideas.</div>

Model of HfO2/Al2O3 Dielectric ALNINNAlganmos HEMT for Power Application

The work involves to devise dielectric HfO2 /Al2O3MOS-HEMT stack to validate for the device structure through the refinement of mesh analysis. The structure of the AlN\InN\AlGaN HEMT MOS-HEMTs are designed and meshed using the script file in the Sentaurus structure editor. TheAlN\InN\AlGaN MOS-HEMTs output characteristic are examined for physics of MOS-HEMT in Hydrodynamic model TCAD. The amalgamation formation ofthe Al0.30GaN0.70 barrierinterface with the channelofhigh 2DEG density result in anincreaseddrain current density and high trans conductance. Additional the device performance of DC transfer characteristics, small signal analysis of AlN/InN/AlGaNMOS-HEMT are analyzed and simulated.