Large-Scale System Analysis Under Uncertainty

Discover a comprehensive set of tools and techniques for analyzing the impact of uncertainty on large-scale engineered systems. Providing accessible yet rigorous coverage, it showcases the theory through detailed case studies drawn from electric power application problems, including the impact of integration of renewable-based power generation in bulk power systems, the impact of corrupted measurement and communication devices in microgrid closed-loop controls, and the impact of components failures on the reliability of power supply systems. The case studies also serve as a guide on how to tackle similar problems that appear in other engineering application domains, including automotive and aerospace engineering. This is essential reading for academic researchers and graduate students in power systems engineering, and dynamic systems and control engineering.

A 9T FinFET SRAM cell for ultra-low power application in the subthreshold regime

Due to the scaling of the CMOS, the limitations of these devices raised the need for alternative nano-devices. Various devices are proposed like FinFET, TFET, CNTFET. Among these, the FinFET emerges as one of the promising devices which can replace the CMOS due to its low leakage in the nanometer regime. The electronics devices are nowadays more compact and efficient in terms of battery consumption. The CMOS SRAMs have been replaced by the FinFET SRAMs due to the scaling limitations of the CMOS. Two FinFET SRAM cells have been which power efficient are and having high stability. Performance comparison of these cells has been done to analyze the leakage power and the static noise margins. The simulation of the cells is done at 20 nm FinFET technology. It has been analyzed that the write margin of improved 9T SRAM cell achieves an improvement of 1.49x. The read margin is also showing a drastic improvement over the existing cells which has been compared in the paper. The hold margin was found to be better in the case of the proposed SRAM cell at 0.4 V. The gate length has been varied to find the effect on read margin with gate length.

Comparative Analysis of Surface Mounted and Interior Permanent Magnet Synchronous Motor for Low rating Power Application

In this paper a comparative analysis is reported between Surface Mounted Permanent Magnet (SMPM) and Interior Permanent Magnet (IPM) Synchronous Motor for low Power rating application using ANSYS Software. In this study, a 0.55Kw, 220V rated Permanent Magnet Synchronous Motor (PMSM) with two different structures is considered. Here both electromagnetic (i.e. Air gap magnetic flux density) and electromechanical properties (i.e. torque) are considered for obtaining the target. In addition, Iron loss and is also involved for comparison. The results of the analysis were confirmed by Finite Element (FE) Analysis and were based on a simplified analytical model based on a given rating. Results obtained through this method, for validated with the result reported in the literature. Further modification is also done in the parameters and those results are also reported.

Modeling of Average Current in Non-Ideal Buck and Synchronous Buck Converters for Low Power Application

In this paper, a comparative analysis of the average switch/inductor current between ideal and non-ideal buck and synchronous buck converters is performed and verified against a standard LTspice model. The mathematical modeling of the converters was performed using volt-sec and amp-sec balance equations and analyzed using MATLAB/Simulink. The transients in the output voltage and the inductor current were observed. The transfer function of the switch current to the duty cycle (Gid) in open loop configuration for low-power converters operating in continuous conduction mode (CCM) was modeled using thestate space averaging (SSA) technique and analyzed using MATLAB/Simulink. Initially, using the volt-sec and amp-sec, balance equations for the converters were modeled. The switch current to duty ratio (Gid) was derived using the SSA technique and verified using standard average models available in LTspice software. Though the Gid was derived using various methods in earlier works, the analyses of parameters such as low frequency gain, stability, resonant frequency and the location of poles and zeros were not presented. It was observed that the converters were stable, and the non-ideal converter showed smaller resonant frequency than the ideal converter due to the equivalent series resistances (ESR) of the inductor and the capacitor. The non-ideal converters showed higher stability than the ideal converters due to the placement of the poles closer to the s-plane. However, the Gid of the non-ideal converters remained the same in the open loop configuration.