Fundamentals and SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices

Model Equations ◽

This paper reports the fundamentals and SPICE implementation of the dynamic memdiode model (DMM) for the conduction characteristics of bipolar resistive switching devices. The model equations are implemented in the LTSpice simulator using an equivalent circuital approach with behavioral components and sources.

Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2018.14282 ◽

2018 ◽

Vol 18 (4) ◽

pp. 2650-2656 ◽

Cited By ~ 1

Author(s):

Xuejiao Zhang ◽

Zhiwei Xu ◽

Bai Sun ◽

Jianjun Liu ◽

Yanyan Cao ◽

...

Keyword(s):

Resistive Switching ◽

Multiple State ◽

Understanding the intermediate initial state in TiO2−δ/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices

Applied Physics Letters ◽

10.1063/1.3626597 ◽

2011 ◽

Vol 99 (7) ◽

pp. 072113 ◽

Cited By ~ 12

Author(s):

Y. S. Chen ◽

B. Chen ◽

B. Gao ◽

L. P. Chen ◽

G. J. Lian ◽

...

Keyword(s):

Resistive Switching ◽

Initial State ◽

An Investigation on Resistive Switching Characteristics Induced by HfOx and Electrode Interfaces

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.645-646.169 ◽

2015 ◽

Vol 645-646 ◽

pp. 169-177

Author(s):

Xiao Rong Chen ◽

Jie Feng

Keyword(s):

Electric Field ◽

Resistive Switching ◽

Joule Heat ◽

Negative Bias ◽

Comparison And Analysis ◽

Switching Characteristics ◽

Different Characteristics ◽

Unipolar Devices ◽

Pt/HfOx/Pt resistive switching devices with symmetric electrodes were fabricated. Bipolar resistive switching (RS) behaviors and unipolar behaviors were then observed under a positive/negative bias applied to the top electrode (TE). A comparison and analysis of bipolar/unipolar RS behaviors under different voltage polarities was then performed.The results demonstrated that bipolar RS was achieved via a drift of anion (O2-) under the electric field resulting in the rupture and recovery of filaments at the interface. When the filaments dissolved and formed at the interface near BE, the performance of the bipolar RS devices was better. However, for unipolar RS devices, when filaments dissolved and formed at the interface near TE, the performance was even better. These results indicated that a drift of O2-caused by electric field and a diffusion of O2-induced by Joule heat were the main reasons for unipolar RS. The different characteristics of the bipolar and unipolar devices can be attributed to the existence of a different number of defects at the active interface of the devices. This was where the rupture and recovery of filaments occurred. The results also indicate that the active interface is more important than other interfaces for RRAM performance.