scholarly journals Enhanced self-phase modulation in silicon nanowires integrated with 2D graphene oxide films

Author(s):  
David Moss

Two-dimensional layered graphene oxide (GO) films are integrated with silicon-on-insulator nanowires to experimentally demonstrate enhanced self-phase modulation, <a>achieving high broadening factor of up to 4.14 for a device patterned with 0.4-mm-long, 10 layers of GO. </a>

2020 ◽  
Author(s):  
David Moss

Two-dimensional layered graphene oxide (GO) films are integrated with silicon-on-insulator nanowires to experimentally demonstrate enhanced self-phase modulation, <a>achieving high broadening factor of up to 4.14 for a device patterned with 0.4-mm-long, 10 layers of GO. </a>


2020 ◽  
Author(s):  
David Moss

Two-dimensional layered graphene oxide (GO) films are integrated with silicon-on-insulator nanowires to experimentally demonstrate enhanced self-phase modulation, achieving high broadening factor of up to 4.14 for a device patterned with 0.4-mm-long, 10 layers of GO.


2020 ◽  
Author(s):  
David Moss

We experimentally demonstrate enhanced self-phase modulation in silicon nanowire waveguides integrated with layered graphene oxide films. We achieve spectral broadening of optical pulses in the GO-silicon waveguide with a broadening factor up to 2.96.


2020 ◽  
Author(s):  
David Moss

We experimentally demonstrate enhanced self-phase modulation in silicon nanowire waveguides integrated with layered graphene oxide films. We achieve spectral broadening of optical pulses in the GO-silicon waveguide with a broadening factor up to 2.96.


2020 ◽  
Author(s):  
David Moss

We experimentally demonstrate enhanced self-phase modulation in silicon nanowire waveguides integrated with layered graphene oxide films. We achieve spectral broadening of optical pulses in the GO-silicon waveguide with a broadening factor up to 2.96.


2020 ◽  
Author(s):  
David Moss

<a>Two-dimensional </a>layered graphene oxide films are integrated with micro-ring resonators to experimentally demonstrate enhanced four-wave mixing, achieving up to ~7.6-dB enhancement in conversion efficiency for a uniformly coated device and ~10.3-dB for a patterned device.


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