Two-dimensional layered
graphene oxide (GO) films are integrated with silicon-on-insulator nanowires to
experimentally demonstrate enhanced
self-phase modulation, <a>achieving high broadening factor of up to 4.14 for a device
patterned with 0.4-mm-long, 10 layers of GO. </a>
Two-dimensional layered
graphene oxide (GO) films are integrated with silicon-on-insulator nanowires to
experimentally demonstrate enhanced
self-phase modulation, <a>achieving high broadening factor of up to 4.14 for a device
patterned with 0.4-mm-long, 10 layers of GO. </a>
We experimentally demonstrate enhanced self-phase modulation in silicon nanowire waveguides integrated with layered graphene oxide films. We achieve spectral broadening of optical pulses in the GO-silicon waveguide with a broadening factor up to 2.96.
Two-dimensional layered graphene oxide (GO) films are integrated with silicon-on-insulator nanowires to experimentally demonstrate enhanced self-phase modulation, achieving high broadening factor of up to 4.14 for a device patterned with 0.4-mm-long, 10 layers of GO.
We experimentally
demonstrate enhanced self-phase modulation in silicon nanowire waveguides
integrated with layered graphene oxide films. We achieve spectral broadening of
optical pulses in the GO-silicon waveguide with a broadening factor up to 2.96.
Enhanced self-phase modulation in silicon nanowires integrated with 2D graphene oxide films
