Effect of Rare-earth Doping on the Thermoelectric Properties of the Tin-based Half-Heusler Alloys

2010 ◽  
Vol 25 (6) ◽  
pp. 573-576 ◽  
Author(s):  
Xiao-Guang LI ◽  
De-Xuan HUO ◽  
Cai-Jun HE ◽  
Shi-Chao ZHAO ◽  
Yan-Fei Lü
Keyword(s):  
Rare Earth ◽  
Thermoelectric Properties ◽  
Heusler Alloys ◽  
Rare Earth Doping

Thermoelectric properties of rare-earth doped Fe2VAl Heusler alloys

2020 ◽  
Vol 32 (35) ◽  
pp. 355706
Author(s):  
Sudhakara Rao Hari ◽  
V Srinivas ◽  
C R Li ◽  
Y K Kuo
Keyword(s):  
Rare Earth ◽  
Thermoelectric Properties ◽  
Heusler Alloys ◽  
Rare Earth Doped

Influence of rare earth doping on thermoelectric properties of SrTiO3 ceramics

2013 ◽  
Vol 114 (22) ◽  
pp. 223714 ◽  
Author(s):  
J. Liu ◽  
C. L. Wang ◽  
Y. Li ◽  
W. B. Su ◽  
Y. H. Zhu ◽  
...  
Keyword(s):  
Rare Earth ◽  
Thermoelectric Properties ◽  
Rare Earth Doping ◽  
Srtio3 Ceramics

scholarly journals Thermoelectric properties of rare earth doped Ca3-xRExCo4O9 (RE = Dy, Er, Gd, and Tb; x = 0, 0.01, 0.03, and 0.05)

2014 ◽  
Vol 32 (4) ◽  
pp. 376-382 ◽  
Author(s):  
Sh. Rasekh ◽  
G. Constantinescu ◽  
M. A. Torres ◽  
J. C. Diez ◽  
M. A. Madre ◽  
...  
Keyword(s):  
Rare Earth ◽  
Thermoelectric Properties ◽  
Rare Earth Doped

Implications of nanostructuring on the thermoelectric properties in half-Heusler alloys

2012 ◽  
Vol 101 (13) ◽  
pp. 133103 ◽  
Author(s):  
A. Bhardwaj ◽  
D. K. Misra ◽  
J. J. Pulikkotil ◽  
S. Auluck ◽  
A. Dhar ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Heusler Alloys

Erbium Tris(Amide) Compounds as Source Molecules FOR Rare Earth Doping of Semiconducting Materials

1995 ◽  
Vol 415 ◽  
Author(s):  
Oliver Just ◽  
Anton C. Greenwald ◽  
William S. Rees
Keyword(s):  
Rare Earth ◽  
Solid State ◽  
Earth Element ◽  
Optoelectronic Devices ◽  
Analytical Techniques ◽  
Optically Active ◽  
Rare Earth Doping ◽  
Semiconducting Materials ◽  
Host Materials ◽  
Erbium Doped

ABSTRACTThe homoleptic compound erbium{tris[bis (trimethylsilyl)]amide} displays high doping ability for incorporation of the rare earth element into epitaxially grown semiconducting host materials for fabrication of temperature-independent, monochromatic solid state optoelectronic devices. Electronic characteristics derived from erbium doped semiconducting films have been obtained. Several more volatile and lower melting representatives of this class of compounds have been synthesized, characterized by various analytical techniques and examined for their suitability to incorporate optically-active erbium centers into a semiconducting environment.

Rare-earth doping engineering in nanostructured ZnO: a new type of eco-friendly photocatalyst with enhanced photocatalytic characteristics

2018 ◽  
Vol 124 (9) ◽  
Author(s):  
Yue Fang ◽  
Jihui Lang ◽  
Jiaying Wang ◽  
Qiang Han ◽  
Zhe Zhang ◽  
...  
Keyword(s):  
Rare Earth ◽  
Rare Earth Doping ◽  
New Type

On the influence of rare earth doping on microstructure and phase composition of sputtered, epitaxial Bi2Sr2(Cax−1REx)Cu2O8+δ films and multilayers

1998 ◽  
Vol 302 (2-3) ◽  
pp. 207-214 ◽  
Author(s):  
A.C. Meltzow ◽  
S. Altmeyer ◽  
H. Kurz ◽  
N.D. Zakharov ◽  
S. Senz ◽  
...  
Keyword(s):  
Rare Earth ◽  
Phase Composition ◽  
Rare Earth Doping
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