Study of Response Time Depending on Driving Voltage of Liquid Crystal Spatial Light Modulator

2013 ◽  
Vol 50 (9) ◽  
pp. 092302
Author(s):  
Qi Mengjiao ◽  
Wang Qidong ◽  
Mu Quanquan ◽  
Liu Yonggang ◽  
Yao Lishuang ◽  
...  
Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1477
Author(s):  
Hongyang Guo ◽  
Qing Li ◽  
Yangjie Xu ◽  
Yongmei Huang ◽  
Shengping Du

In the line of sight correction system, the response time of the liquid crystal spatial light modulator under the normal driving voltage is too long to affect system performance. On the issues, an overdriving method based on a Field-Programmable Gate Array (FPGA) is established. The principle of the overdrive is to use a higher voltage difference to achieve a faster response speed of liquid crystal. In this scheme, the overdriving look-up table is used to seek the response time of the quantized phase, and the liquid crystal electrode is driven by Pulse–Width Modulation (PWM). All the processes are performed in FPGA, which releases the central processing unit (CPU) memory and responds faster. Adequate simulations and experiments are introduced to demonstrate the proposed method. The overdriving experiment shows that the rising response time is reduced from 530 ms to 34 ms, and the falling time is from 360 ms to 38 ms under the overdriving voltage. Typical light tracks are imitated to evaluate the performance of the line of sight correction platform. Results show that using the overdrive the −3 dB rejection frequency was increased from 1.1 Hz to 2.6 Hz. The suppression ability of the overdrive is about −20 dB at 0.1 Hz, however the normal-driving suppression ability is only about −13 dB.


1991 ◽  
Vol 219 ◽  
Author(s):  
Garret Moddel ◽  
Pierre R. Barbier

ABSTRACTA successful application for a-Si:H is as the photosensor in a liquid crystal optically addressed spatial light modulator (OASLM). We analyze the response time of an a-Si:H p-i-n photodiode in a “pseudo-OALSM,” in which the liquid crystal is replaced by an equivalent capacitor, under both forward and reverse bias. Under reverse bias the two important effects are the photocurrent response time, and residual trapped charge. Under forward bias the mechanism shifts from double injection regimes to ohmic transport as a function of voltage. We relate these characteristics to the operation of an OASLM.


1995 ◽  
Author(s):  
Steven A. Serati ◽  
Gary D. Sharp ◽  
Roylnn A. Serati ◽  
Douglas J. McKnight ◽  
Jay E. Stockley

Micron ◽  
2003 ◽  
Vol 34 (6-7) ◽  
pp. 327-332 ◽  
Author(s):  
J. McOrist ◽  
M.D. Sharma ◽  
C.J.R. Sheppard ◽  
E. West ◽  
K. Matsuda

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