Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode
2013 ◽
Vol 389
◽
pp. 409-414
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Vertical structure of resonant cavity light-emitting diode (RCLED) is presented in this paper to further improve the photoelectric performance of the device. Modeling and 2D simulation have been proceeded with Crosslight APSYS[, the analysis and modeling software for semiconductor devices. Main results of the simulation are listed and discussed. The peak wavelength locates at about 550 nm with half-wave width of about 10 nm and its output power has been enhanced by 25% than the conventional one. The results prove that vertical RCLED is a considerable source for POF-based fiber communication.
2000 ◽
Vol 180
(1)
◽
pp. 33-35
◽
1996 ◽
Vol 25
(8)
◽
pp. 1388-1393
◽
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