Current-Voltage and Ferroelectric Characteristics of Er2O3-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 624 ◽  
pp. 162-165
Author(s):  
C.Q. Huang ◽  
X.B. Liu ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Negative Differential Resistance ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Er2O3-doped bismuth titanate，Bi4-xErxTi3O12 (BET) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BET ceramic with x=0.8 were above 20μC/cm2 and 65KV/cm , respectively.

Preparation and Electrical Characteristics of Bi4-xYbxTi3O12 Ceramics

2013 ◽  
Vol 591 ◽  
pp. 212-215 ◽  
Author(s):  
Chong Qing Huang ◽  
J. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Yb-doped bismuth titanate,Bi4-xYbxTi3O12 (BYbT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BYbT ceramic with x=0.75 were above 16μC/cm2 and 75KV/cm , respectively.

Electrical Characterization and Microstructures of Bi4-xDyxTi3O12 Ceramics

2014 ◽  
Vol 633 ◽  
pp. 366-369
Author(s):  
Chong Qing Huang ◽  
X.A. Mei ◽  
M. Chen ◽  
B. Li
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Electrical Characterization ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Dy-doped bismuth titanate,Bi4-xDyxTi3O12(BDT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr) and coercive field (Ec) of the BDT ceramic with x=0.75 were above 16μC/cm2and 75KV/cm , respectively.

Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 492 ◽  
pp. 210-213 ◽  
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
J. G. Liu ◽  
J. Liu ◽  
Chong Qing Huang
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Eu-doped bismuth titanate，Bi4-xEuxTi3O12(BET) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr) and coercive field (Ec) of the BST ceramic with x=0.8 were above 16μC/cm2and 70KV/cm , respectively.

Electrical Characteristics and Microstructures of Ce2O3-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 412 ◽  
pp. 298-301
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
A.H. Cai ◽  
J. Liu ◽  
Chong Qing Huang
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Ce-doped bismuth titanate, Bi4-xCexTi3O12(BCT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr) and coercive field (Ec) of the BCT ceramic with x=0.8 were above 20μC/cm2and 60KV/cm , respectively.

Effect of Gd Substitution on Electrical Characteristics and Microstructures of Bi4Ti3O12 Ceramics

2014 ◽  
Vol 633 ◽  
pp. 261-264
Author(s):  
X.A. Mei ◽  
M. Chen ◽  
J. Liu ◽  
R.F. Liu
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Gd-doped bismuth titanate Bi4-xGdxTi3O12 (BGT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the ceramics with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the ceramics with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BGT ceramic with x=0.8 were above 16μC/cm2 and 70KV/cm , respectively.

Large Remanent Polarization of Pm2O3-Doped Bi4Ti3O12 Films

2013 ◽  
Vol 591 ◽  
pp. 104-107
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Pm-doped bismuth titanate (Pm4-xLaxTi3O12: BPT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Fims with x=0.75 were above 40μC/cm2 and 60KV/cm , respectively.

Large Remanent Polarization of Bi4Ti3O12 Films by Ho3+ Substitution

2013 ◽  
Vol 833 ◽  
pp. 29-32
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Ho-doped bismuth titanate (Bi4-xHoxTi3O12: BHT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BHT Fims with x=0.75 were above 30μC/cm2 and 60KV/cm , respectively.

Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics by Sm3+ Substitution

2012 ◽  
Vol 624 ◽  
pp. 154-157
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Layered Perovskite Structure ◽  
Large Leakage Current ◽  
Bst Ceramics ◽  
Titanate Ceramics

The electrical properties of Sm-doped bismuth titanate，Bi4-xSmxTi3O12 (BST) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. The P-V hysteresis loops of samples with x=0.4 and 1.2 were characterized by large leakage current, whereas for samples with x=0.6 and 0.8 the P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BST ceramic with x=0.8 were above 20μC/cm2 and 60KV/cm , respectively.

Ferroelectric Characteristics of Bi4-xPrxTi3O12 Ceramics

2014 ◽  
Vol 633 ◽  
pp. 382-385
Author(s):  
Rui Fang Liu ◽  
X.A. Mei ◽  
M. Chen ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Layered Perovskite ◽  
Layered Perovskite Structure ◽  
Large Leakage Current

The electrical properties of Pr2O3-doped bismuth titanate,Bi4-xPrxTi3O12 (BPT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all ceramics. SEM micrographs showed randomly oriented and plate-like morphology. For the ceramics with x=0.25 and 1.0 P-E hysteresis loops were characterized by large leakage current, whereas for the ceramics with x=0.5 and 0.75 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT ceramic with x=0.75 were above 18μC/cm2 and 65KV/cm , respectively.

Ferroelectric Characterization and Microstructures of Bi4-xLuxTi3O12 Ceramics

2013 ◽  
Vol 833 ◽  
pp. 21-24
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
C.Q. Huang ◽  
R.F. Liu
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Layered Perovskite ◽  
Layered Perovskite Structure ◽  
Large Leakage Current

Ferroelectric electrical properties of Lu2O3-doped bismuth titanate,Bi4-xLuxTi3O12 (BLT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 0.75 P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 18μC/cm2 and 85KV/cm , respectively.

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