An Investigation for the Negative-Bias Temperature Instability Aware CMOS Logic

Background: Scaling of the dimensions of semiconductor device plays a very important role in the advancement of very large-scale integration (VLSI) technology. There are many advantages of scaling in VLSI technology such as increment in the speed of the device and less area requirement of the device. Aggressive device scaling causes some limitations in the form of short channel effects which produce large leakage current. Large leakage current harms the characteristics of the device and affects the reliability of the device. Objective: The most important and popular reliability issue in deep submicron (DSM) regime is negative-bias temperature instability (NBTI). NBTI effect increases the threshold voltage of p-channel metal oxide semiconductor (PMOS) device over the time and affects the different characteristics of the device. As a result, circuit delay exceeds the design specification and there may be timing violations or logic failure. Different performance parameters are observed under NBTI effect for different logic gates. Methods: This paper presents an impact of NBTI at 22nm Berkeley short-channel IGFET model4 (BSIM4) predictive technology model (PTM) for complementary metal oxide semiconductor (CMOS) logic gates. Reliability simulations are utilised to evaluate the amount of gradual damage in PMOS device due to NBTI effect. Results : The impact of NBTI degradation is checked for various CMOS logic gates using Mentor Graphics’s Eldo circuit simulator. Output voltage and drain current are reducing over the time under NBTI effect. Conclusion: NBTI degradation increases the threshold voltage of PMOS device over the time and affects the different characteristics of the device.

Bi2WO6 Lead-free Ferroelectrics: Microstructure Design, Polar behavior and Photovoltaic Performance

Bi2WO6 (BWO) is a promising ferroelectric material because of its high Curie temperatures and environmentally benign nature. However, the mica-like grains growth habit and large leakage current make it difficult...

Comparison of Test Setups for High Field Conductivity of HVDC Insulation Materials

<p>Electrical conductivity is considered to be a key property for HVDC insulation. For cable insulation the conductivity level has to be sufficiently low in order to avoid a large leakage current that could cause heat generation in the insulation and contribute to additional transmission losses. The distribution of conductivity in the radial direction of the cable insulation dictates the distribution of electric field and space charge at steady state. It is therefore of interest to know the conductivity characteristics of insulation materials intended for HVDC cables.<br />This paper presents a test method and procedure for evaluating the high field electrical conductivity of HVDC insulating materials and crosslinked polyethylene in particular. The results presented in this paper are generated from two nearly identical measurement setups using the same sample geometry, but installed in two different test facilities (ABB and Borealis). The results reveal that differences in conductivity can be seen; even between test setups with only minor differences and that the influence of sample preparation is crucial to obtain reproducibility. However, the decay of the measured current was observed to be relatively different between the measurement set-ups.</p>

Electrical Characterization and Microstructures of Bi4-xDyxTi3O12 Ceramics

The electrical properties of Dy-doped bismuth titanate,Bi4-xDyxTi3O12(BDT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr) and coercive field (Ec) of the BDT ceramic with x=0.75 were above 16μC/cm2and 75KV/cm , respectively.

Effect of Gd Substitution on Electrical Characteristics and Microstructures of Bi4Ti3O12 Ceramics

The electrical properties of Gd-doped bismuth titanate Bi4-xGdxTi3O12 (BGT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the ceramics with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the ceramics with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BGT ceramic with x=0.8 were above 16μC/cm2 and 70KV/cm , respectively.

Ferroelectric Characteristics of Bi4-xPrxTi3O12 Ceramics

The electrical properties of Pr2O3-doped bismuth titanate,Bi4-xPrxTi3O12 (BPT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all ceramics. SEM micrographs showed randomly oriented and plate-like morphology. For the ceramics with x=0.25 and 1.0 P-E hysteresis loops were characterized by large leakage current, whereas for the ceramics with x=0.5 and 0.75 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT ceramic with x=0.75 were above 18μC/cm2 and 65KV/cm , respectively.

Preparation and Electrical Characteristics of Bi4-xYbxTi3O12 Ceramics

The electrical properties of Yb-doped bismuth titanate,Bi4-xYbxTi3O12 (BYbT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BYbT ceramic with x=0.75 were above 16μC/cm2 and 75KV/cm , respectively.

Ferroelectric Characterization and Microstructures of Bi4-xLuxTi3O12 Ceramics

Ferroelectric electrical properties of Lu2O3-doped bismuth titanate,Bi4-xLuxTi3O12 (BLT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 0.75 P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 18μC/cm2 and 85KV/cm , respectively.

Ferroelectric Properties of Bi4-xPmxTi3O12 Ceramics

The electrical properties of Pm2O3-doped bismuth titanate,Bi4-xPmxTi3O12 (BPT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT ceramic with x=0.8 were above 18μC/cm2 and 75KV/cm , respectively.