Single Crystal CVD Diamond Nuclear Detectors

2006 ◽  
Vol 48 ◽  
pp. 103-112 ◽  
Author(s):  
Claudio Manfredotti

CVD diamond films have reached in recent years superlative improvements in their “ detector grade “ quality, with a time derivative which was never registered for other similar frontier materials. The basic properties of high quality CVD diamond films make them very interesting for a wide range of radiation detectors : they provide fast signals with very low leakage currents, they are very radiation resistant, they have excellent thermal properties and they can be manufactured as free-standing detectors. The recent availability of single crystal CVD diamond samples of extreme good quality, suitable thickness and surface area has opened new application fields in nuclear detection and dosimetry, such as, for instance, hadron therapy and neutron spectrometry in fusion reactors. At the same time, strip and pixel detectors of unprecedented performances have been successfully realized and exploited in the framework of high energy physics experiments. The paper will review the more recent history of CVD diamond nuclear detectors with respect to material quality, with a particular emphasis on epitaxial single crystals diamond, and the achievements in terms of applications in some different fields.

2007 ◽  
Vol 1039 ◽  
Author(s):  
John Morse ◽  
Murielle Salomé ◽  
Eleni Berdermann ◽  
Michal Pomorski ◽  
James Grant ◽  
...  

AbstractUltrapure, homoeptaxially grown CVD single crystal diamond is a material with great potential for the fabrication of ionizing radiation detectors for high energy, heavy ion physics, and realtime dosimetry for radiotherapy. Only diamond has suitable transmission properties and can offer the required radiation hardness for synchrotron X-ray beam monitoring applications. We report on experiments made using a synchrotron X-ray microbeam probe to investigate the performance of single crystal diamonds operated as position sensitive, solid state ‘ionization chambers’. We show that for a wide range of electric fields >0.3Vµm−1, suitably prepared devices give excellent spatial response uniformity and time stability. With an applied field of 2Vµm−1 complete charge collection times are ∼1nsec for a diamond plate thickness of 100µm. Position sensitivity was obtained for an X-ray beam incident on the isolation gap between adjacent electrodes of a quadrant device: here, a crossover response region that results from charge carrier diffusion extends over ∼20µm. Using GHz bandwidth signal processing electronics, the signal charge collection process was measured with spatial and temporal resolutions of 1µm and <50ps.


Author(s):  
H.P. Feng ◽  
H. Zhu ◽  
Wei Min Mao ◽  
Leng Chen ◽  
Fan Xiu Lu

2009 ◽  
Vol 206 (9) ◽  
pp. 2109-2114 ◽  
Author(s):  
M. Pomorski ◽  
M. Ciobanu ◽  
C. Mer ◽  
M. Rebisz-Pomorska ◽  
D. Tromson ◽  
...  

2006 ◽  
Vol 15 (2-3) ◽  
pp. 292-295 ◽  
Author(s):  
A. Balducci ◽  
Marco Marinelli ◽  
E. Milani ◽  
M.E. Morgada ◽  
G. Pucella ◽  
...  

2000 ◽  
Vol 47 (4) ◽  
pp. 1430-1433 ◽  
Author(s):  
M. Bruzzi ◽  
M. Bucciolini ◽  
G.A.P. Cirrone ◽  
G. Cuttone ◽  
A. Guasti ◽  
...  

1990 ◽  
Vol 5 (11) ◽  
pp. 2497-2501 ◽  
Author(s):  
S. A. Grot ◽  
S. Lee ◽  
G.Sh. Gildenblat ◽  
C. W. Hatfield ◽  
C. R. Wronski ◽  
...  

Schottky diodes were formed with free-standing polycrystalline thin film diamond base as well as with polycrystalline diamond films grown on crystalline silicon. Current-voltage and internal photoemission measurements were used to characterize the Schottky diodes and the diamond film. Internal photoemission measurements yielded a barrier height of 1.15 eV. A comparison of experimental data for metal contacts to free-standing diamond films and those on silicon substrates indicates that both rectification and internal photoemission originate at the metal/diamond interface.


Sign in / Sign up

Export Citation Format

Share Document