Low Temperature Sintering and Microwave Dielectric Properties of Zinc Titanate Ceramics for LTCC Applications

2008 ◽  
Vol 368-372 ◽  
pp. 179-182
Author(s):  
Zong Chi Liu ◽  
Dong Xiang Zhou ◽  
Shu Ping Gong
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Solid State Method ◽  
Zinc Titanate ◽  
Microwave Dielectric ◽  
Conventional Solid State Method ◽  
State Method ◽  
Titanate Ceramics

The effects of CuO-MoO3 addition on the sintering behavior and microwave dielectric properties of ZnO-TiO2 ceramics were investigated. ZnO-TiO2 ceramics were prepared with conventional solid-state method and sintered at temperatures from 850 to 1050 °C. The sintering temperature of ZnO-TiO2 ceramics with CuO-MoO3 addition could be effectively reduced to 950 °C due to the liquid phase effects resulting from the additives. A proper amount of CuO-MoO3 addition could effectively improve the densification and microwave dielectric properties of ZnO-TiO2 ceramics. ZnO-TiO2 ceramics with 3 wt% addition sintered at 950 °C for 4 h exhibited better microwave dielectric properties as follows: εr of 26.8, a Q×f value of 16780 GHz at 5.42 GHz, and a τ f value of +34.7 ppm/°C.

Effect of Sintering Temperature on CuO Doped Barium Zinc Tantalate (BZT) Dielectric Properties

2016 ◽  
Vol 840 ◽  
pp. 8-13
Author(s):  
Hidayani Jaafar ◽  
Zainal Arifin Ahmad ◽  
Mohd Fadzil Ain
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Relative Density ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Solid State Method ◽  
Microwave Dielectric ◽  
Constant E ◽  
State Method ◽  
Tan Δ

The structure and dielectric properties of Barium Zinc Tantalate (BZT) doped by copper oxide (CuO) with a variety of values of mol% doping from 0, 0.1, 0.25, 1.0, 1.5 and 2.5 were prepared using a solid state method. The addition of CuO did not disturb the 1:2 ordering structure of the BZT ceramic. The grain size increased when the addition of doping increased. A small amount of doping elements increased the relative density. The dielectric constant (ɛr) value of the BZT significantly improved with the addition of the CuO for the specimens sintered at 1250°C and it could be explained by the increase of the relative density. The tan δ of the CuO doped with BZT ceramics is lower than pure BZT ceramics, and decreases as the CuO content increases. Meanwhile, for the percentage of bandwidth (%BW) it is shown that the best result is produced when it is doped with 0.25 mol% CuO and sintered at 1250°C. The best microwave dielectric properties obtained were ɛr=70.28, tan δ = 0.024, %BW = 7.83 which occurred for the 0.25 mol% doped CuO and when sintered at 1250°C/4 h.

Effect of bismuth addition on sintering behavior and microwave dielectric properties of zinc titanate ceramics

2005 ◽  
Vol 34 (1) ◽  
pp. 119-124 ◽  
Author(s):  
Hsun-Chin Chen ◽  
Ming-Hang Weng ◽  
Jui-Hong Horng ◽  
Mau-Phon Houng ◽  
Yeong-Her Wang
Keyword(s):  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Zinc Titanate ◽  
Microwave Dielectric ◽  
Titanate Ceramics

Tuning the Microwave Dielectric Properties of Nd0.96Yb0.04(Mg0.5Sn0.5)O3 by Introducing Ca0.8Sr0.2TiO3

2015 ◽  
Vol 1119 ◽  
pp. 451-455
Author(s):  
Yih Chien Chen ◽  
Chih Hung Li ◽  
Hua Xian Liu ◽  
Jing Yu Fu
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
X Ray Diffraction ◽  
Ceramic System ◽  
Solid State Method ◽  
X Ray ◽  
Microwave Dielectric ◽  
Conventional Solid State Method ◽  
Diffraction Patterns

The influence of sintering temperature on the microwave dielectric properties and microstructure of the (1-y)Nd0.96Yb0.04(Mg0.5Sn0.5)O3-yCa0.8Sr0.2TiO3 ceramic system were investigated with a view to their application in microwave devices. The (1-y)Nd0.96Yb0.04(Mg0.5Sn0.5)O3-yCa0.8Sr0.2TiO3 ceramic systems were prepared using the conventional solid-state method. The X-ray diffraction patterns of the (1-y)Nd0.96Yb0.04(Mg0.5Sn0.5)O3-yCa0.8Sr0.2TiO3 ceramic system shifted to higher angle as y increased. A dielectric constant of 38.2, a quality factor (Q×f) of 53,500 GHz, and a temperature coefficient of resonant frequency of-3 ppm/°Cwere obtained when the 0.4 Nd0.96Yb0.04(Mg0.5Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system was sintered at 1600 °C for 4h.

Microwave Properties in BaO-TiO2 System Added by ZrO2 and WO3

2012 ◽  
Vol 512-515 ◽  
pp. 1155-1159 ◽  
Author(s):  
Xin Ye Yang ◽  
Xiao Hui Wang ◽  
An Ji ◽  
Long Tu Li
Keyword(s):  
Dielectric Properties ◽  
Dielectric Property ◽  
Solid State ◽  
Sintering Temperature ◽  
Microwave Properties ◽  
Solid State Method ◽  
Microwave Dielectric ◽  
Conventional Solid State Method ◽  
Higher Temperature ◽  
State Method

Both BaTi4O9 and Ba2Ti9O20 have the best microwave properties among many compounds in BaO-TiO2 system. The microwave performance of the ceramics in BaO-TiO2 system, which were prepared by conventional solid state method, was investigated in this paper. The study indicates that the (Ti,Zr)/Ba ratio has a great effect on the dielectric properties of the ceramic due to different BaTi4O9/Ba2Ti9O20 ratio. The pure BaTi4O9 ceramic exhibits the most outstanding microwave properties, with εr=35.55 and Q×f=43300GHz. On the contrary, the dielectric property of the pure Ba2Ti9O20 ceramic was not good enough, which should be doped with some additive additions. WO3 was incorporated into the system and the sintering temperature was adjusted to improve the microwave dielectric property. The Q×f was increased to 38000GHz by adding 1.35mol% WO3 due to the formation of a little BaWO4 phase. When sintered at a higher temperature (1380°C), the BaO-TiO2 system ceramic has εr =37.04 and Q×f =44874GHz.

Effect of ZnO-V2O5 Co-Doping on Phase Stability and Microwave Dielectric Properties of ZnTiO3 Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 297-300 ◽  
Author(s):  
Jing Yan ◽  
Zhen Xing Yue ◽  
Jin Wang ◽  
Fei Zhao ◽  
Zhi Lun Gui ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Process ◽  
Quality Factors ◽  
Zinc Titanate ◽  
Co Doping ◽  
Microwave Dielectric ◽  
Titanate Ceramics

Zinc titanate ceramics having excellent dielectric properties and low sintering temperature are promising materials for RF/microwave multilayer devices. In this paper, the ZnO-V2O5 addition was added to promote the sintering process in order to obtain low-temperature sintered ceramics with high quality factors. The sintering addition could also restrain ZnTiO3 phase from decomposition. Using this method, low-temperature sintered zinc titanate ceramics with excellent microwave dielectric properties of εr~ 25.3, Q×f~15200GHz, and τf ~ -16 ppm/oC were obtained at sintering temperature of 800oC. The low-fired mechanism, microstructure, phase formation and microwave dielectric properties of ceramics were investigated by XRD, SEM, EDS and network analysis techniques, respectively.

Low Temperature Sintering of (Ca0.9375Sr0.0625)0.25(Li0.5Sm0.5)0.75TiO3 Microwave Dielectric Ceramics

2010 ◽  
Vol 663-665 ◽  
pp. 1028-1031
Author(s):  
Yue Ming Li ◽  
Hua Zhang ◽  
Zhu Mei Wang ◽  
Yan Hong ◽  
Zong Yang Shen
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Low Temperature Sintering ◽  
Microwave Dielectric Ceramics ◽  
Microwave Dielectric ◽  
Dielectric Ceramics

The sintering behavior and microwave dielectric properties of the (Ca0.9375Sr0.0625)0.25(Li0.5Sm0.5)0.75TiO3 (CSLST) ceramics doped with different amounts of Li2O-B2O3-SiO2-CaO-Al2O3 (LBSCA) glass were investigated. The sintering temperature of the CSLST ceramics can be effectively reduced over 200oC due to the addition of LBSCA glass. For the 5 wt% LBSCA-doped CSLST ceramics, which are sintered at only 1000 oC for 5 h, show optimum microwave dielectric properties as follows: εr=84.74, Qf=2446 GHz and τf=-12.48 ppm/oC.

Application of La2O3-B2O3-TiO2 Glass-Ceramic for Low Temperature Co-Fired Ceramic (LTCC) Materials

2004 ◽  
Vol 449-452 ◽  
pp. 729-732 ◽  
Author(s):  
Byung Hae Jung ◽  
Seong Jin Hwang ◽  
Hyung Sun Kim
Keyword(s):  
Rare Earth ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Borate Glass ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Microwave Dielectric ◽  
Good Potential ◽  
Phase Evaluation

A low-temperature co-fired composition with sintering temperature of <900 °C was developed using rare earth derived borate glass (La2O3-B2O3-TiO2) and a conventional BNT (BaONd2O3-TiO2) ceramic. The sintering behavior, phase evaluation, sintered morphology, and microwave dielectric properties were investigated. It was found that increasing the sintering temperature from 750 to 850°C leads to increases in shrinkage, densities and microwave dielectric properties (≈ 20 for εr and >8000 for Q*f0). However, after 850 °C , the values of these properties decreased. It is suggested therefore that this new composite has good potential as a new candidate for low temperature co-fired ceramic (LTCC) materials.

Low-Temperature Firing and Microwave Dielectric Properties of Zn3Nb2O8 Ceramics with CuO-V2O5-Bi2O3

2010 ◽  
Vol 434-435 ◽  
pp. 224-227
Author(s):  
Xu Ping Lin ◽  
Jing Tao Ma ◽  
Bao Qing Zhang ◽  
Ji Zhou
Keyword(s):  
Dielectric Constant ◽  
Phase Composition ◽  
Dielectric Properties ◽  
Relative Density ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Co Doping ◽  
Microwave Dielectric ◽  
Quality Factor Q

The influence of CuO-V2O5-Bi2O3 addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of Zn3Nb2O8 ceramics were investigated. The co- doping of CuO, V2O5 and Bi2O3 can significantly lower the sintering temperature of Zn3Nb2O8 ceramics from 1150°C to 900°C. The Zn3Nb2O8-0.5wt% CuO-0.5wt% V2O5-2.0wt% Bi2O3 ceramic sintered at 900°C showed a relative density of 97.1%, a dielectric constant (εr) of 18.2, and a quality factor (Q×f) of 36781 GHz. The dielectric properties in this system exhibited a significant dependence on the relative density, content of additives and sintering temperature. The relative density and dielectric constant (εr) of Zn3Nb2O8 ceramics increased with increasing CuO-V2O5-Bi2O3 additions. And also the relative density and dielectric constant of Zn3Nb2O8 ceramics increased by the augment of the sintering temperature.

Effects of CuO and V2O5 Addition on Sintering Behavior and Microwave Dielectric Properties of (1-x)Ca2P2O7-xTiO2

2007 ◽  
Vol 336-338 ◽  
pp. 279-282
Author(s):  
In Sun Cho ◽  
Sang Gu Kang ◽  
Dong Wan Kim ◽  
Kug Sun Hong
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Resonant Frequency ◽  
Temperature Coefficient ◽  
Quality Factor ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Microwave Dielectric

The effects of CuO and V2O5 addition on sintering behaviors and microwave dielectric properties of 0.7Ca2P2O7-0.3TiO2 ceramics were investigated. With CuO and V2O5 addition, the sintering temperature of 0.7Ca2P2O7-0.3TiO2 can be effectively reduced from 1150 to 950oC. The dielectric constant of the low fired 0.7Ca2P2O7-0.3TiO2 ceramics was not significantly changed while the quality factor was affected by additives. The temperature coefficient of resonant frequency value was increased in negative value with the additive contents. V2O5 and CuO additives effectively improved the densification and dielectric properties of 0.7Ca2P2O7-0.3TiO2 ceramics. The correlation between the phase constituents and the dielectric properties was investigated with additive contents.

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