Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

2001 ◽  
Vol 353-356 ◽  
pp. 15-20 ◽  
Author(s):  
Erwin Schmitt ◽  
Michael Rasp ◽  
Arnd Dietrich Weber ◽  
M. Kölbl ◽  
Robert Eckstein ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Defect Reduction ◽  
Thermal Boundary Conditions

Growth and Characterization of 2″ 6H-Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
Erwin Schmitt ◽  
Robert Eckstein ◽  
Martin Kölbl ◽  
Amd-Dietrich Weber
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Growth Process ◽  
Defect Density ◽  
Crystal Quality ◽  
Process Conditions ◽  
Thermal Boundary Conditions ◽  
Sublimation Growth ◽  
Defect Densities

ABSTRACTFor the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

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