A New Method for Bulk-Quantity Synthesis of Patterned Well-Aligned ZnO Nanowire Arrays

2005 ◽  
Vol 475-479 ◽  
pp. 3509-3512
Author(s):  
X.Y. Xu ◽  
Hui Zhao Zhang ◽  
Qiang Zhao ◽  
Yun Fa Chen ◽  
Jian Xu ◽  
...  

Large area well-aligned ZnO nanowire arrays have successfully been synthesized on an unconventional substrate: stainless-steel mesh at a low growth temperature of 400oC. The as-grown ZnO nanowires have uniform diameters about 20 nm and a strong UV peak was observed in photoluminescence spectra. The growth method provides a novel way to produce high quality ZnO nanowire arrays, and can be also used to direct the controllable growth of other nanomaterials.

2009 ◽  
Vol 1 (12) ◽  
pp. 2843-2847 ◽  
Author(s):  
Jae K. Hwang ◽  
Sangho Cho ◽  
Eun K. Seo ◽  
Jae M. Myoung ◽  
Myung M. Sung

2011 ◽  
Vol 21 (4) ◽  
pp. 137-146
Author(s):  
Tran Van Khai ◽  
Maneeratanasarn Prachuporn ◽  
Bong-Geun Choi ◽  
Hyoun-Woo Kim ◽  
Dae-Sup So ◽  
...  

2019 ◽  
Vol 234 ◽  
pp. 384-387 ◽  
Author(s):  
Hongtao Ren ◽  
Gang Xiang ◽  
Jia Luo ◽  
Dingyu Yang ◽  
Xi Zhang

AIP Advances ◽  
2011 ◽  
Vol 1 (3) ◽  
pp. 032104 ◽  
Author(s):  
Chun Cheng ◽  
Tai Lun Wong ◽  
Wei Li ◽  
Chao Zhu ◽  
Shuigang Xu ◽  
...  

ACS Nano ◽  
2008 ◽  
Vol 3 (1) ◽  
pp. 53-58 ◽  
Author(s):  
Chun Cheng ◽  
Ming Lei ◽  
Lin Feng ◽  
Tai Lun Wong ◽  
K. M. Ho ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 240
Author(s):  
Yangyang Zhao ◽  
Yicong Chen ◽  
Guofu Zhang ◽  
Runze Zhan ◽  
Juncong She ◽  
...  

Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm2 area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.


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