Direct catalyst-free self-assembly of large area of horizontal ferromagnetic ZnO nanowire arrays

2019 ◽  
Vol 234 ◽  
pp. 384-387 ◽  
Author(s):  
Hongtao Ren ◽  
Gang Xiang ◽  
Jia Luo ◽  
Dingyu Yang ◽  
Xi Zhang
2009 ◽  
Vol 1 (12) ◽  
pp. 2843-2847 ◽  
Author(s):  
Jae K. Hwang ◽  
Sangho Cho ◽  
Eun K. Seo ◽  
Jae M. Myoung ◽  
Myung M. Sung

2007 ◽  
Vol 61 (3) ◽  
pp. 666-670 ◽  
Author(s):  
S. Ren ◽  
Y.F. Bai ◽  
Jun Chen ◽  
S.Z. Deng ◽  
N.S. Xu ◽  
...  

2006 ◽  
Vol 89 (26) ◽  
pp. 263116 ◽  
Author(s):  
Y. D. Wang ◽  
K. Y. Zang ◽  
S. J. Chua ◽  
C. G. Fonstad

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 240
Author(s):  
Yangyang Zhao ◽  
Yicong Chen ◽  
Guofu Zhang ◽  
Runze Zhan ◽  
Juncong She ◽  
...  

Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm2 area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.


2011 ◽  
Vol 257 (8) ◽  
pp. 3374-3377 ◽  
Author(s):  
Fang Fang ◽  
Dongxu Zhao ◽  
Binghui Li ◽  
Zhenzhong Zhang ◽  
Dezhen Shen ◽  
...  

2005 ◽  
Vol 475-479 ◽  
pp. 3509-3512
Author(s):  
X.Y. Xu ◽  
Hui Zhao Zhang ◽  
Qiang Zhao ◽  
Yun Fa Chen ◽  
Jian Xu ◽  
...  

Large area well-aligned ZnO nanowire arrays have successfully been synthesized on an unconventional substrate: stainless-steel mesh at a low growth temperature of 400oC. The as-grown ZnO nanowires have uniform diameters about 20 nm and a strong UV peak was observed in photoluminescence spectra. The growth method provides a novel way to produce high quality ZnO nanowire arrays, and can be also used to direct the controllable growth of other nanomaterials.


2007 ◽  
Vol 91 (23) ◽  
pp. 233112 ◽  
Author(s):  
T. F. Chung ◽  
L. B. Luo ◽  
Z. B. He ◽  
Y. H. Leung ◽  
I. Shafiq ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document