Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC
2006 ◽
Vol 527-529
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pp. 543-546
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Keyword(s):
We present new electron-paramagnetic-resonance (EPR) data on the HEI4/SI5 center in 4H-SiC. So far, the SI5 (SI-5) center has been observed only in as-grown SiC substrates; however, we found that it can be created by electron irradiation to commercial n-type 4H-SiC. The artificially created SI5 center, which we had preliminary called HEI4, was found to be identical with the SI5 center in as-grown SiC. A high-intensity HEI4/SI5 spectrum of irradiated SiC revealed clear hyperfine structures of 29Si and 13C, which enabled us to identify the origin of this center as a carbon antisite-vacancy pair in the negative charge state (CSi-VC –). We assessed its electronic levels using photo-EPR.
2007 ◽
Vol 556-557
◽
pp. 453-456
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2007 ◽
pp. 453-456
1985 ◽
Vol 18
(23)
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pp. L707-L710
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2013 ◽
Vol 740-742
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pp. 385-388
1992 ◽
Vol 1
(Part_2)
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pp. 89-98
1980 ◽
Vol 255
(17)
◽
pp. 8116-8120
1966 ◽
Vol 241
(10)
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pp. 2256-2259