Negative Thermal Expansion in Mn3Ga(Ge,Si)N Anti-Perovskite Materials

2007 ◽  
Vol 561-565 ◽  
pp. 557-562 ◽  
Author(s):  
Ying Sun ◽  
Cong Wang ◽  
Yong Chun Wen
Keyword(s):  
Heat Capacity ◽  
Thermal Expansion ◽  
Transport Properties ◽  
Electronic Transport ◽  
Perovskite Structure ◽  
Magnetic Transition ◽  
Negative Thermal Expansion ◽  
Electronic Transport Properties ◽  
Perovskite Materials ◽  
Expansion Behavior

Mn3GaN has anti-perovskite structure and there exists an abnormal thermal expansion behavior in accompanying with a magnetic transition and variation of electronic transport properties. Substitution of Ga by Ge(Si) induces the change of the thermal expansion properties and the corresponding temperature range. The structure, heat capacity, magnetic and electronic transport properties of Mn3Ga(Ge,Si)N were investigated and discussed.

Magnetic and Electronic Transport Properties of Single Crystal La0.64Pb0.36MnO3

1997 ◽  
Vol 494 ◽  
Author(s):  
Jihui Yang ◽  
Siqing Hu ◽  
Ctirad Uher ◽  
P. D. Han ◽  
D. A. Payne
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Transport Properties ◽  
Electronic Transport ◽  
Magnetic Transition ◽  
Single Crystal Sample ◽  
Orthorhombic Crystal ◽  
Crystal Sample ◽  
Electronic Transport Properties ◽  
Significant Difference

ABSTRACTWe studied the magnetic and electronic transport properties of a single crystal sample of La0.64Pb0.36MnO3 in the temperature range 5 K to 350 K and magnetic field up to 5.5 T. A magnetic transition is found at 210 K. The single crystal sample is ferromagnetic below the transition temperature (Tc) and becomes paramagnetic at temperatures T > Tc. Magnetization measurements along three different orthorhombic crystal axes show no significant difference. The magnetoresistance approaches a maximum value of about -60% at Tc in 5 T magnetic field strength and has qualitatively different field dependence below and above Tc. The scaling behavior between resistivity and magnetic moment is examined for temperatures both below and above the transition. A low temperature (T<15 K) dp / dT < 0 effect is attributed to possible quantum tunneling of carriers between neighbouring distortions.

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties

Improved thermoelectric transport properties of Ge4Se3Te through dimensionality reduction

2021 ◽  
Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh
Keyword(s):  
Dimensionality Reduction ◽  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Transport ◽  
Electronic Transport Properties ◽  
Thermoelectric Transport Properties

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...

scholarly journals Effect of vacancy defects on the electronic transport properties of an Ag–ZnO–Pt sandwich structure

2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Density Functional ◽  
Practical Importance ◽  
Functional Formalism ◽  
Vacancy Defects ◽  
Electronic Transport Properties ◽  
Charge Localization ◽  
Metal Insulator Metal ◽  
Current Rectification

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.

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