Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 1305-1308
Author(s):  
Masanobu Yoshikawa ◽  
Masataka Murakami ◽  
Takaya Fujita ◽  
K. Inoue ◽  
K. Matsuda ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Spectral Variation ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Cathodoluminescence Spectroscopy

We have measured cathodoluminescence (CL) spectra in the vicinity of V-defects in InGaN single-quantum-well(SQW) films at nanometer level, using newly developed CL apparatus (SE-SEM-CL). From spectroscopic CL measurement, it has been found that the spectra change dramatically in the vicinity of V-defects in the region of £50nm. The SE-SEM-CL has a potential to detect the CL spectral variation at spatial resolution with £50nm.

Characterization of V-defects in InGaN Single Quantum Well Films at the Nanometer Level by High-Spatial-Resolution Cathodoluminescence Spectroscopy

2008 ◽  
Vol 62 (1) ◽  
pp. 86-90 ◽  
Author(s):  
M. Yoshikawa ◽  
M. Murakami ◽  
H. Ishida ◽  
H. Harima
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spatial Resolution ◽  
Single Quantum ◽  
Peak Wavelength ◽  
Single Quantum Well ◽  
Cathodoluminescence Spectroscopy ◽  
Working Distance ◽  
Acceleration Voltage

We have developed a new scanning electron microscope (SEM) equipped with a Schottky emission (SE) gun that produces a high probe current at an acceleration voltage of less than 5 kV and a cathodoluminescence (CL) spectroscopic system (SE-SEM-CL) equipped with an SE gun and a newly designed parabolic mirror that has a very short working distance of 9 mm in order to enhance the spatial resolution of CL spectroscopy. We have studied CL spectral variations in the vicinity of V-defects in InGaN single quantum well (SQW) film by measuring its CL spectra at the nanometer level, using our SE-SEM-CL system. It has been found that the peak intensity and peak wavelength of the CL peak around 454 nm assigned to the quantum wells emission of the InGaN SQW layer significantly change in the vicinity of the V-defects. We have considered that the change in the peak wavelength is mainly caused by a change in the In content in the InGaN SQW layer. Our SE-SEM-CL has a spatial resolution of less than 40 nm for the InGaN SQW layer.

Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy

2002 ◽  
Vol 92 (12) ◽  
pp. 7153-7156 ◽  
Author(s):  
M. Yoshikawa ◽  
K. Matsuda ◽  
Y. Yamaguchi ◽  
T. Matsunobe ◽  
Y. Nagasawa ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Silicon Dioxide Film ◽  
Cathodoluminescence Spectroscopy ◽  
Dioxide Film

Characterization of thin p-clad InGaAs single-quantum-well lasers

1995 ◽  
Vol 7 (7) ◽  
pp. 718-720 ◽  
Author(s):  
C.H. Wu ◽  
P.S. Zory ◽  
M.A. Emanuel
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well

Growth and Characterization of High Qualitya-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique

2010 ◽  
Vol 49 (4) ◽  
pp. 04DH03
Author(s):  
Hooyoung Song ◽  
Jin Soak Kim ◽  
Eun Kyu Kim ◽  
Yong Gon Seo ◽  
Sung-Min Hwang
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure ◽  
Layer Technique

Growth and characterization of InXGa1-XN/GaN single quantum well prepared by MOCVD

2015 ◽  
Author(s):  
K. Prabakaran ◽  
R. Ramesh ◽  
M. Jayasakthi ◽  
R. Loganathan ◽  
P. Arivazhagan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well

Micro-Raman characterization of InGaN/GaN single quantum well nanocolumns on Si(111) substrate

2013 ◽  
Vol 80 (4) ◽  
pp. 565-570 ◽  
Author(s):  
P. Sangeetha ◽  
V. Sasirekha ◽  
R. Vadivelu ◽  
K. Kishino ◽  
V. Ramakrishnan
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Raman Characterization
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