Characterization of CNx Thin Films Synthesized by Laser Ablation Technique

In this work we report the optical characteristics of carbon nitride films produced by a KrF excimer laser ablation technique. The ablated materials were collected on different wafers, glass and porous silicon for different N2 pressures (0.1-0.5mbar). The thin films were synthesized at room temperature. The deposited thin films were characterized by spectrophotometry, ellipsometry, scanning electron microscopy (SEM) and Fourier Transform Infrared Spectroscopy (FTIR). The results show that the optical band gap deduced from optical transmission spectra in the ultraviolet- visible – near infrared range increases with deposition time and with nitrogen pressures increasing. SEM observation indicates that the CNx film is granular. Finally, FTIR spectra reveal carbon nitride absorption bands which do not seem change considerably with N2 pressures.

Download Full-text

Preparation of PZT thin films on YBCO electrodes by KrF excimer laser ablation technique

Surface and Coatings Technology ◽

10.1016/s0257-8972(97)00663-4 ◽

1998 ◽

Vol 100-101 ◽

pp. 424-427 ◽

Cited By ~ 7

Author(s):

H. Kurogi ◽

Y. Yamagata ◽

K. Ebihara ◽

N. Inoue

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Excimer Laser ◽

Pzt Thin Films ◽

Excimer Laser Ablation ◽

Ablation Technique ◽

Krf Excimer Laser ◽

Laser Ablation Technique

Download Full-text

Structural and electrical characterization of Bi2VO5.5 / Bi4Ti3O12 bilayer thin films deposited by pulsed laser ablation technique

Natural Science ◽

10.4236/ns.2010.210133 ◽

2010 ◽

Vol 02 (10) ◽

pp. 1073-1078 ◽

Cited By ~ 1

Author(s):

Neelam Kumari ◽

Saluru Baba Krupanidhi ◽

Kalidhindi Balakrishna Raju Varma

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Pulsed Laser ◽

Electrical Characterization ◽

Pulsed Laser Ablation ◽

Ablation Technique ◽

Laser Ablation Technique

Download Full-text

Preparation and characterization of nanostructured NiO thin films by reactive-pulsed laser ablation technique

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2007.04.019 ◽

2007 ◽

Vol 91 (15-16) ◽

pp. 1505-1509 ◽

Cited By ~ 34

Author(s):

B. Sasi ◽

K.G. Gopchandran

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Ablation Technique ◽

Laser Ablation Technique

Download Full-text

Electrical characterization of Ba(Zr0.1Ti0.9)O3 thin films grown by pulsed laser ablation technique

Materials Science and Engineering B ◽

10.1016/s0921-5107(02)00222-2 ◽

2002 ◽

Vol 95 (2) ◽

pp. 124-130 ◽

Cited By ~ 14

Author(s):

Sandip Halder ◽

Sudipta Bhattacharyya ◽

S.B Krupanidhi

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Pulsed Laser ◽

Electrical Characterization ◽

Pulsed Laser Ablation ◽

Ablation Technique ◽

Laser Ablation Technique

Download Full-text

A new reactive pulsed laser ablation technique for the deposition of hard carbon and carbon-nitride thin films

Materials Letters ◽

10.1016/s0167-577x(98)00223-7 ◽

1999 ◽

Vol 39 (2) ◽

pp. 97-102 ◽

Cited By ~ 5

Author(s):

I Alexandrou ◽

I Zergioti ◽

G.A.J Amaratunga ◽

M.J.F Healy ◽

C.J Kiely ◽

...

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Carbon Nitride ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Hard Carbon ◽

Ablation Technique ◽

Laser Ablation Technique

Download Full-text

Lead Zirconate-Titanate Thin Films Prepared by the Laser Ablation Technique

MRS Proceedings ◽

10.1557/proc-200-133 ◽

1990 ◽

Vol 200 ◽

Cited By ~ 18

Author(s):

C. K. Chiang ◽

L. P. Cook ◽

P. K. Schenck ◽

P. S. Brody ◽

J. M. Benedetto

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Lead Zirconate Titanate ◽

Lead Zirconate ◽

X Ray ◽

Ablation Technique ◽

Zirconate Titanate ◽

Deposited Films ◽

Plate Type ◽

Laser Ablation Technique

ABSTRACTLead zirconate-titanate (PZT) thin films were prepared by the laser ablation technique. The PZT (Zr/Ti=53/47) target was irradiated using a focused q-switched Nd:YAG laser (15 ns, 100 mJ at 1.064 μ;m). The as-deposited films were amorphous as indicated by X-ray powder patterns, but crystallized readily with brief annealing above 650°C. The dielectric constant and the resistivity of the crystallized films were studied using a parallel-plate type capacitor structure.

Download Full-text

Preparation of PbZrxTi1−xO3 Thin Films by KrF Excimer Laser Ablation Technique

MRS Proceedings ◽

10.1557/proc-433-237 ◽

1996 ◽

Vol 433 ◽

Cited By ~ 2

Author(s):

Hiromitsu Kurogi ◽

Yukihiko Yamagata ◽

Tomoaki Ikegami ◽

Kenji Ebihara ◽

Bok Yin Tong

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Excimer Laser ◽

Oxygen Pressure ◽

Ferroelectric Properties ◽

Pzt Thin Films ◽

Excimer Laser Ablation ◽

Pzt Films ◽

Krf Excimer Laser ◽

Laser Ablation Technique

AbstractPb(ZrxTi1−x)O3(PZT) thin films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films using the excimer laser ablation technique. A pulsed KrF excimer laser was used to ablate PZT bulk targets. We have studied optimum preparation conditions such as an oxygen pressure, a laser energy fluence and a substrate temperature.In this paper, we investigated the composition, crystallization and ferroelectric properties of the PZT films prepared under various deposition conditions.The X-ray diffraction (XRD) patterns showed that the PZT films prepared on MgO(100) substrates at 600°C and with a laser fluence of 2J/cm2 had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provided high quality perovskite films. It is found that the stoichiometric composition of the deposited films is obtained in ambient oxygen of 100˜400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve were discussed.We also studied optical emission of the PZT plasma plume to understand quantitative relation between the PZT film quality and the ablation plume plasma. We identified spectral lines originated in Pb, Pb+, Zr, Zr+, Ti, Ti+, PbO and TiO. These spectral intensities have remarkable dependence on the ambient O2 pressure.

Download Full-text