Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS
2014 ◽
Vol 778-780
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pp. 281-284
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Keyword(s):
The deep levels ON1and ON2a/bintroduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/bdefect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.
Keyword(s):
1965 ◽
Vol 85
(3)
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pp. 605-606
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2020 ◽
Vol 10
(1)
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pp. 6-11
Keyword(s):
1981 ◽
Vol 28
(2)
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pp. 1072-1073
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Keyword(s):
2012 ◽
Vol 86
(6)
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pp. 503-512
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Keyword(s):
1988 ◽
Vol 3
(9)
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pp. 847-852
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Keyword(s):
1964 ◽
Vol 83
(1)
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pp. 35-41
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