First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application
2014 ◽
Vol 778-780
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pp. 499-502
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Keyword(s):
We calculated the hyperfine structure and the zero-field splitting parameters of divacancies in 3C, 4Hand 6HSiC in the ground state and in the excited state for 4HSiC within the framework of density functional theory. Besides that our calculations provide identification of the defect in different polytypes, we can find some carbon atoms next to the divacancy that of the spin polarizations are similar in the ground and excited states. This coherent nuclear spin polarization phenomenon can be the base to utilize13C spins as quantum memory.
2010 ◽
Vol 114
(39)
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pp. 10750-10758
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2020 ◽
2010 ◽
Vol 133
(6)
◽
pp. 064101
◽
2016 ◽
Vol 3
(1)
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pp. 89
◽