Protective Agent Free Eco-Synthesis of Silver Nanowire via Needle-Shaped Silver Acetate Precursor

2014 ◽  
Vol 804 ◽  
pp. 115-118 ◽  
Author(s):  
Kenta Sugawara ◽  
Yamato Hayashi ◽  
Jun Fukushima ◽  
Hirotsugu Takizawa
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Ultrasound Irradiation ◽  
Silver Nanowire ◽  
Synthetic Method ◽  
Protective Agent ◽  
Silver Acetate ◽  
Protective Agents ◽  
Heating Up

We developed new synthetic method of silver nanowire by reducing silver acetate precursor. Silver acetate could be easily synthesized by ultrasound irradiation to the mixture of non-toxic starting materials, only ethanol and silver (I) oxide. All of reaction was performed in relatively low temperature and it does not need any protective agents. The precursors had high aspect ratio needle-shaped morphology. They decomposed easily by heating up to 300 °C and then produce only silver without any residues. This process is expected to be new synthetic method of silver nanowire that doesn’t require any protective agents and emit much waste.

EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures Using a Low-Cost Automated Batch Process

1999 ◽  
Author(s):  
Fan-Gang Tseng ◽  
Gang Zhang ◽  
Uri Frodis ◽  
Adam Cohen ◽  
Florian Mansfeld ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Low Cost ◽  
Batch Process ◽  
Unlimited Number ◽  
Metal Layers ◽  
Electrochemical Fabrication ◽  
Low Temperature Process

Abstract EFAB (“Electrochemical FABrication”) is a new micromachining process utilizing an innovative “Instant Masking” (IM) technique to electrochemically deposit an unlimited number of metal layers for microfabrication. Through this approach, high-aspect-ratio microstructures with arbitrary 3-D geometry can be rapidly and automatically batch-fabricated at low temperature (< 60 °C) using an inexpensive desktop machine. IC-MEMS integration can also be carried out by this low temperature process.

scholarly journals Low temperature fabrication of Fe2O3 nanorod film coated with ultra-thin g-C3N4 for a direct z-scheme exerting photocatalytic activities

RSC Advances ◽  
2018 ◽  
Vol 8 (59) ◽  
pp. 33600-33613 ◽  
Author(s):  
Suhee Kang ◽  
Joonyoung Jang ◽  
Rajendra C. Pawar ◽  
Sung-Hoon Ahn ◽  
Caroline Sunyong Lee
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Photocatalytic Activities

The engineered high aspect ratio of Fe2O3 nanorods coated with g-C3N4 demonstrates z-scheme mechanism, showing the best performance in 4-nitrophenol photodegradation and H2 evolution.

scholarly journals Two-step synthesis of high aspect ratio gold nanorods

2006 ◽  
Vol 4 (1) ◽  
pp. 160-165 ◽  
Author(s):  
Tom Mortier ◽  
André Persoons ◽  
Thierry Verbiest
Keyword(s):  
Aspect Ratio ◽  
Gold Nanorods ◽  
High Aspect Ratio ◽  
Cetyltrimethylammonium Bromide ◽  
Surfactant Concentration ◽  
Synthetic Method ◽  
Aspect Ratios ◽  
Seed Mediated

AbstractWe describe a very simple, two-step synthetic method to prepare gold nanorods with extremely high aspect ratios (> 20) and average lengths of more than 1000 nm. The method is based on a seed-mediated growth in presence of the surfactant cetyltrimethylammonium bromide. The length and aspect ratios of the nanorods can be manipulated by varying the surfactant concentration.

Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures

2014 ◽  
Vol 53 (6) ◽  
pp. 068007 ◽  
Author(s):  
Daeseok Lee ◽  
Jiyong Woo ◽  
Sangsu Park ◽  
Euijun Cha ◽  
Sangheon Lee ◽  
...  
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio

Low Temperature Copper Deposition by PE-ALD

2009 ◽  
Vol 1195 ◽  
Author(s):  
Jiajun Mao ◽  
Eric Eisenbraun ◽  
Vincent Omarjee ◽  
Clement Lanslot ◽  
Christian Dussarrat
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Deposition Rate ◽  
Electrochemical Deposition ◽  
High Aspect Ratio ◽  
Seed Layer ◽  
Surface Coverage ◽  
Copper Deposition ◽  
Process Conditions ◽  
Film Properties

AbstractWith the continuing scaling in device sizes, sputtered copper is not expected to achieve the conformality and surface coverage requirements to be an effective seed layer for electrochemical deposition in sub-32nm features. Additionally, the metallization demands of high aspect ratio TSVs in 3D-architectures pose similar challenges. In this work, a manufacturable low temperature Cu PE-ALD process has been developed employing a novel O and F-free precursor. The ALD process conditions are correlated with key film properties, including deposition rate, composition, step coverage, and resistivity. Additionally, the influence of precursor substituents on the deposition rate and preliminary integration performance are discussed.

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