scholarly journals Numerical Study of Energy Capability of Si/SiC LDMOSFETs

2017 ◽  
Vol 897 ◽  
pp. 751-754 ◽  
Author(s):  
C.W. Chan ◽  
Fan Li ◽  
Philip A. Mawby ◽  
Peter M. Gammon

A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI, PSOI and PSOSiC technology, using capacitive and inductive switching circuits established in SILVACO Mixed-mode simulators. The results show that the PSOSiC has a thermal advantage compared with other SOI structures under a 48-μs-power-pulse condition, but the Si/SiC device offers superior cooling and energy handling ability in all switching cases despite having a larger chip area.

2018 ◽  
Vol 2 (2) ◽  
pp. 30 ◽  
Author(s):  
Rossana Dimitri ◽  
Francesco Tornabene
Keyword(s):  

2019 ◽  
Vol 160 ◽  
pp. 89-100 ◽  
Author(s):  
Mohammad E. Shemshadian ◽  
Jia-Liang Le ◽  
Arturo E. Schultz ◽  
Patrick McGetrick ◽  
Salam Al-Sabah ◽  
...  

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