Numerical Study of Energy Capability of Si/SiC LDMOSFETs
2017 ◽
Vol 897
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pp. 751-754
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Keyword(s):
A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI, PSOI and PSOSiC technology, using capacitive and inductive switching circuits established in SILVACO Mixed-mode simulators. The results show that the PSOSiC has a thermal advantage compared with other SOI structures under a 48-μs-power-pulse condition, but the Si/SiC device offers superior cooling and energy handling ability in all switching cases despite having a larger chip area.
2016 ◽
Vol 81
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pp. 160-178
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Keyword(s):
2017 ◽
Vol 82
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pp. 157-172
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2019 ◽
Vol 160
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pp. 89-100
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Keyword(s):
2020 ◽
Vol 406
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pp. 132493
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Keyword(s):
Keyword(s):