Enhanced Optical Absorption of Dual-Diameter Structured Silicon Nanoholes Array

2020 ◽  
Vol 976 ◽  
pp. 116-120
Author(s):  
Yi Liu ◽  
Na Meng ◽  
Ya Wei Kuang ◽  
Shu Chang Wang ◽  
Zhi Chun Ni ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Structural Parameters ◽  
Underlying Mechanism ◽  
Absorption Enhancement ◽  
Optimal Parameters ◽  
Silicon Thin Film ◽  
Long Wavelength ◽  
Enhancement Factors ◽  
Wavelength Absorption ◽  
Wavelength Control

The optical properties have been numerically investigated in crystalline silicon nanoholes array for various structural parameters. We have demonstrated that the light absorption can be greatly enhanced in silicon nanoholes array especially for long wavelength absorption compared with single diameter nanoholes array. We have also obtained the optimal parameters for absorption wavelength control, at which the photocurrent enhancement factors have been achieved to be 14.43% compared to silicon thin film. Furthermore, the underlying mechanism of the absorption enhancement in dual-diameter nanoholes array has been discussed.

A Boron Doped Amorphous Silicon Thin-Film Bolometer for Long Wavelength Detection

2002 ◽  
Vol 744 ◽  
Author(s):  
A. Heredia-J ◽  
A. Torres-J ◽  
A. Jaramillo-N ◽  
F.J. De la Hidalga-W ◽  
M. Landa-V.
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Thermal Coefficient ◽  
Silicon Thin Film ◽  
Long Wavelength ◽  
Silicon Nitride Membrane ◽  
Boron Doped ◽  
Wavelength Detection ◽  
Thermal Coefficient Of Resistance

ABSTRACTThe fabrication of a bolometer for infrared detection using a boron doped amorphous silicon (a-Si-B:H) thin film is presented for the first time. This thin film (170 nm) was deposited on a silicon nitride membrane sustained by a frame made of micromachined crystalline silicon in order to improve the thermal isolation. Electrical connectivity to the element was achieved by means of aluminum contact pads. The resultant figures of merit, measured at room temperature, were: electrical conductivity of 1.513×10-3 (Ω-cm)-1, thermal coefficient of resistance of 3.4 %K-1, and the device is sensitive to temperature variations as small as 20 mK.

Structure-selected graphene/metallic surface plasmon coupling regime and infrared modulation application

2021 ◽  
Author(s):  
Ye Zhang ◽  
Jianjun Lai ◽  
Changhong Chen
Keyword(s):  
Gate Dielectric ◽  
Modulation Depth ◽  
Strong Dependence ◽  
Underlying Mechanism ◽  
Absorption Enhancement ◽  
Metallic Surface ◽  
Dielectric Thickness ◽  
Long Wavelength ◽  
Surface Plasmon Coupling ◽  
Induced Transparency

Abstract Here we present a graphene-based long-wavelength infrared modulator characteristic of extra-high contrast, where the frequency detuning degree of magnetic and electric surface plasmons (SPs) is controllable by the gated graphene Fermi energy. If the device is designed to work in a strong SP-coupling regime by selecting an appropriate low-lossy gate dielectric thickness, a modulation depth (MD) up to ~100% but insertion loss (IL) as low as ~-0.37 dB is achievable. Moreover, a compromised MD >90% with IL <-1.0 dB is still retainable in two broadband ranges. The disclosed underlying mechanism to the device working state in the strong, electromagnetic-induced transparency (EIT), or weak SP-coupling regime, indicates the coupling regime shows a strong dependence on the dielectric thickness, which is related to the magnetic-SP mode volume, while the working wavelength can be selected in a broader spectral range by scaling the device geometry. These findings are helpful to construct those optoelectronics for infrared absorption enhancement, EIT, and strong coupling spectral characteristic itself.

Textured (111) crystalline silicon thin film growth on flexible glass by e-beam evaporation

2015 ◽  
Vol 158 ◽  
pp. 269-273 ◽  
Author(s):  
Shane McMahon ◽  
Ashok Chaudhari ◽  
Zhouying Zhao ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Thin Film Growth ◽  
Silicon Thin Film

Photocytotoxicity of Anthracyclines upon Laser Excitation in Their Long-Wavelength Absorption Bands

1991 ◽  
Vol 127 (1) ◽  
pp. 24 ◽  
Author(s):  
Alessandra Andreoni ◽  
Alberto Colasanti ◽  
Vincenzo Malatesta ◽  
Giuseppe Roberti
Keyword(s):  
Laser Excitation ◽  
Absorption Bands ◽  
Long Wavelength ◽  
Wavelength Absorption
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