Textured (111) crystalline silicon thin film growth on flexible glass by e-beam evaporation

2015 ◽  
Vol 158 ◽  
pp. 269-273 ◽  
Author(s):  
Shane McMahon ◽  
Ashok Chaudhari ◽  
Zhouying Zhao ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Thin Film Growth ◽  
Silicon Thin Film

Modeling of Epitaxial Silicon Thin‐Film Growth on a Rotating Substrate in a Horizontal Single‐Wafer Reactor

1995 ◽  
Vol 142 (12) ◽  
pp. 4272-4278 ◽  
Author(s):  
Hitoshi Habuka ◽  
Takatoshi Nagoya ◽  
Masatake Katayama ◽  
Manabu Shimada ◽  
Kikuo Okuyama
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Epitaxial Silicon ◽  
Silicon Thin Film

Molecular-Dynamics Simulations of Hydrogenated Amorphous Silicon Thin-Film Growth

1995 ◽  
Vol 408 ◽  
Author(s):  
T. Ohira ◽  
O. Ukai ◽  
M. Noda ◽  
Y. Takeuchi ◽  
M. Murata ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Film Growth ◽  
Hydrogenated Amorphous Silicon ◽  
Md Simulations ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Radical Migration ◽  
Hydrogenated Amorphous

AbstractWe have performed molecular-dynamics (MD) simulations of hydrogenated amorphous silicon (a-Si:H) thin-film growth using realistic many-body semiclassical potentials developed to describe Si-H interactions. In our MD model, it was assumed that SiH3, SiH2 and the H radicals are main precursors for the thin-film growth. In MD simulations of a-Si:H thin-film growth by many significant precursor SiH3 radicals, we have evaluated average radical migration distances, defect ratios, hydrogen contents, and film growth rates as a function of different incident radical energies to know the effect of the radical energization on the properties. As a result of the comparison between the numerical and experimental results, it was observed that the agreement is fairly good, and that an increase of radical migration distance due to the radical energization is effective on a- Si:H thin-film growth with a low defect.

A new thin film Growth/Regrowth Process Design and Experimental Comparisons with Molecular Dynamic Analyses

1992 ◽  
Vol 283 ◽  
Author(s):  
Takako K. Okada ◽  
Shigeru Kambayashi ◽  
Moto Yabuki ◽  
Yoshitaka Tsunashima ◽  
Yuichi Mirata ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Process Design ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Thin Film Growth ◽  
Phase Growth ◽  
Amorphous Silicon Film

ABSTRACTA new concept of thin film growth/regrowth process design taking atomic motions into account using molecular dynamics is proposed. In the system, a modified many-body Tersoff-type interatomic potential for silicon has been adopted. The mathematical derivation of higher order derivatives was rigorously treated. Among many applications, the solid phase growth process was studied. It has been found from simulation studies that the solid phase growth of crystalline silicon proceeded along the [110] direction layer by layer. Furthermore, it has been obtained that all the atoms are activated in an extremely thin amorphous silicon film. Based on simulated results, an experiment using an extremely thin amorphous silicon film was carried out. It has been found that the perfect spherical silicon crystals with a uniform size and spacing can be grown from a thin amorphous silicon film.

The Structure of Silicon Thin Films Grown on Sapphire by MBE

1987 ◽  
Vol 107 ◽  
Author(s):  
M. E. Twigg ◽  
J. G. Pellegrino ◽  
E. D. Richmond
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Transmission Electron

AbstractFrom a series of imaging experiments performed in the transmission electron microscope (TEM), it is apparent that for silicon grown on sapphire (SOS) by molecular beam epitaxy (MBE), silicon thin film growth on the (1012) sapphire plane resembles that observed for analogous films grown by chemical vapor deposition (CVD). At 900°C very thin (150A) silicon films grow as islands with either the (001) or (110) planes parallel to the (1012) plane; it is also found that most of the silicon grows as (001) rather than (110) islands, as is true for CVD-grown SOS. The orientation, however, of (110) islands occuring in this MBE-grown SOS sample differs from that of (110) islands occuring in CVD-grown SOS. By following this initial 150A of growth with 2500A of silicon deposited at. 750°C, a continuous (001) film was grown in which microtwins appear to be the predominant defect. The MBE-grown SOS also resembles that grown by CVD in that the microtwin densities associated with the “majority” and “minority” twinning systems are influenced by the orientation of the sapphire substrate.

Sign in / Sign up

Export Citation Format

Share Document