A Boron Doped Amorphous Silicon Thin-Film Bolometer for Long Wavelength Detection

2002 ◽  
Vol 744 ◽  
Author(s):  
A. Heredia-J ◽  
A. Torres-J ◽  
A. Jaramillo-N ◽  
F.J. De la Hidalga-W ◽  
M. Landa-V.
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Thermal Coefficient ◽  
Silicon Thin Film ◽  
Long Wavelength ◽  
Silicon Nitride Membrane ◽  
Boron Doped ◽  
Wavelength Detection ◽  
Thermal Coefficient Of Resistance

ABSTRACTThe fabrication of a bolometer for infrared detection using a boron doped amorphous silicon (a-Si-B:H) thin film is presented for the first time. This thin film (170 nm) was deposited on a silicon nitride membrane sustained by a frame made of micromachined crystalline silicon in order to improve the thermal isolation. Electrical connectivity to the element was achieved by means of aluminum contact pads. The resultant figures of merit, measured at room temperature, were: electrical conductivity of 1.513×10-3 (Ω-cm)-1, thermal coefficient of resistance of 3.4 %K-1, and the device is sensitive to temperature variations as small as 20 mK.

scholarly journals Study of boron-doped zinc oxide film serving as front contact with high haze used in amorphous silicon thin film solar cells

2014 ◽  
Vol 63 (2) ◽  
pp. 028801
Author(s):  
Wang Li ◽  
Zhang Xiao-Dan ◽  
Yang Xu ◽  
Wei Chang-Chun ◽  
Zhang De-Kun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Oxide Film ◽  
Amorphous Silicon ◽  
Thin Film Solar Cells ◽  
Zinc Oxide Film ◽  
Silicon Thin Film ◽  
Boron Doped

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

Amorphous-silicon thin film transistor with two-step exposure process

2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Exposure Process

Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors

1996 ◽  
Vol 424 ◽  
Author(s):  
R. E. I. Schropp ◽  
K. F. Feenstra ◽  
C. H. M. Van Der Werf ◽  
J. Holleman ◽  
H. Meiling
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Current Crowding ◽  
Hot Wire ◽  
Saturation Regime ◽  
Silicon Thin Film ◽  
Order Of Magnitude

AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film
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