Ozone Based Chemical Oxide Growth for Crystalline Solar Cell Production

2012 ◽  
Vol 187 ◽  
pp. 321-324
Author(s):  
Klaus Wolke ◽  
Christiane Gottschalk ◽  
Jochen Rentsch ◽  
Heike Angermann

Emitter formation of crystalline silicon solar cells by inline diffusion can be affected by non-uniformities in dopant deposition prior to the furnace due to insufficient wetting of hydrophobic surfaces. The impact of dissolved ozone treatment after texturing has been investigated with respect to the possibility of improving the emitter formation with a low cost process enhancement. The chemically grown thin oxide improves wetting capability without modification of other surface characteristics that can impact cell efficiency. It could be shown that already low concentrations of ozone in UPW prior to phosphorus doping improve the sheet resistance uniformity on Cz-Si and multi-crystalline Si solar cells between 30 and 100 % compared to HF last treated ones.

2006 ◽  
Vol 90 (20) ◽  
pp. 3557-3567 ◽  
Author(s):  
U. Gangopadhyay ◽  
K.H. Kim ◽  
S.K. Dhungel ◽  
U. Manna ◽  
P.K. Basu ◽  
...  

2018 ◽  
Vol 12 (4) ◽  
pp. 327-334 ◽  
Author(s):  
Galib Hashmi ◽  
Mohammad Junaebur Rashid ◽  
Zahid Hasan Mahmood ◽  
Mahbubul Hoq ◽  
Md. Habibur Rahman

2005 ◽  
Vol 20 (9) ◽  
pp. 938-946 ◽  
Author(s):  
U Gangopadhyay ◽  
S K Dhungel ◽  
K Kim ◽  
U Manna ◽  
P K Basu ◽  
...  

2011 ◽  
Vol 1353 ◽  
Author(s):  
Ad Vermeer ◽  
Roger Gortzen ◽  
P. Poodt ◽  
F. Roozeboom

ABSTRACTAtomic Layer Deposition (ALD) is a gas phase deposition technique for depositing very high quality thin films with an unsurpassed conformality. The main drawback of ALD however is the very low deposition rate (~ 1 nm/min). Recently, record deposition rates for alumina of up to 1 nm/s were reached using spatial ALD, while maintaining the typical assets regarding film quality as obtained by conventional, slow ALD [1]. This allows for ALD at high throughput numbers.One interesting application is passivation of crystalline silicon solar cells. Applying a thin alumina layer is reported to increase solar cell efficiency and enables the use of thinner wafers, thus reducing the main cost factor [2]. In this paper we report on the latest progress made by SoLayTec that delivered a working prototype of a system realizing full area single sided deposition of alumina on 156 x 156 mm2, mono- and multi crystalline silicon wafers for solar cell applications. The alumina layers showed excellent passivation. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/hr. Finally, we report on the process of commercializing this technology.


2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Abdullah Uzum ◽  
Hiroyuki Kanda ◽  
Takuma Noguchi ◽  
Yuya Nakazawa ◽  
Shota Taniwaki ◽  
...  

Aluminum acetylacetonate-based AlOx thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O2, or water vapor (H2O/O2) for 15 or 120 min. XPS analysis confirms the AlOx formation and reveals a high intensity of interfacial SiOx at the AlOx/Si interface of processed wafers. Ambient H2O/O2 was found to be more beneficial for the activation of introduced AlOx passivation films which offers high lifetime improvements with a low thermal budget. Carrier lifetime measurements provides that symmetrically coated wafers reach 119.3 μs and 248.3 μs after annealing in ambient H2O/O2 for 15 min and 120 min, respectively.


Author(s):  
Yutaka Hayashi ◽  
Tadashi Saitoh ◽  
Kunio Hane ◽  
Ryuichi Shimokawa ◽  
Toshihide Takeshita

Author(s):  
Jozef Szlufcik ◽  
Guido Agostinelli ◽  
Filip Duerinckx ◽  
Emmanuel Van Kerschaver ◽  
Guy Beaucarne

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