scholarly journals Physical Properties of Nano-Composite Silica-Phosphate Thin Film Prepared by Sol Gel Technique

2012 ◽  
Vol 02 (01) ◽  
pp. 17-22 ◽  
Author(s):  
Inas Battisha ◽  
Amany El Nahrawy
Author(s):  
F Ayadi ◽  
F Saadaoui ◽  
W Cheikhrouhou-Koubaa ◽  
M Koubaa ◽  
A Cheikhrouhou ◽  
...  

2021 ◽  
pp. 413613
Author(s):  
Xin Liu ◽  
Xinyu Li ◽  
Xiang Li ◽  
Qiulian Li ◽  
Daoyong Zhang ◽  
...  

2015 ◽  
Vol 44 (6) ◽  
pp. 425-429 ◽  
Author(s):  
Kh. Sokhrabi Anaraki ◽  
N. V. Gaponenko ◽  
M. V. Rudenko ◽  
V. V. Kolos ◽  
A. N. Petlitskii ◽  
...  

2010 ◽  
Vol 150-151 ◽  
pp. 1484-1487 ◽  
Author(s):  
Tao Lin ◽  
Xiang Chao Zhang

Titanium dioxide thin film has been successfully synthesized deposited on ITO glass substrates by the sol–gel dip-coating method using freeze drying technique. The precursor and TiO2 film were characterized using XRD, AFM and UV-vis absorption spectra analysis technologies. The XRD result demonstrates that the TiO2 film is well crystallized and consists of anatase phase only with (101) plane. The morphology of the nanoparticles of TiO2 thin film is spherical shape with grain size of 30.1 nm in average diameter and the surface of the TiO2 film is smooth. There is a strong wide UV absorption band around 387 nm and the calculated band gap (Eg) value of the TiO2 thin film is about 3.18 eV. The water contact angles for the thin film was only about 12°. The freeze drying-assisted sol-gel technique offers a novel process route in treating hydrophilic glasses for self-cleaning building materials and would be widely application for building energy saving.


1997 ◽  
Vol 493 ◽  
Author(s):  
Han Wook Song ◽  
Joon Sung Lee ◽  
Dae-Weon Kim ◽  
Kwang Ho Kim ◽  
Tae-Hyun Sung ◽  
...  

ABSTRACTMgO thin films were deposited on Si(100) substrate with different temperatures from 500 °C to 800 °C and different e-beam powers from 25W to 100W using e-beam evaporation method. Pb(Zr0.53Ti0.47)O3(PZT) thin films were deposited on MgO/Si(100) substrates with different drying temperatures from 190 °C to 310 °C using sol-gel technique. If there were no buffer layer between the PZT thin film and Si substrate, the peaks corresponding to perovskite PZT phase were not observed. However the buffer layer were inserted between the PZT thin film and Si substrate, it was possible to fabricate perovskite PZT phase. The barrier effects of MgO thin film to the interdiffusion of Pb were investigated by AES study. Optimum thickness of MgO at which PZT/MgO/Si structure shows P-E hysteresis was calculated, and the hysteresis was tested for PZT/MgO/Si structures with different MgO thicknesses.


2007 ◽  
Vol 43 (2) ◽  
pp. 223-226 ◽  
Author(s):  
Ibrahim H. Mutlu ◽  
Maharram Z. Zarbaliyev ◽  
Ferhat Aslan

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