Effects of Buffer Layer on the Fabrication and Characteristics of Ferroelectric Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Han Wook Song ◽  
Joon Sung Lee ◽  
Dae-Weon Kim ◽  
Kwang Ho Kim ◽  
Tae-Hyun Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Sol Gel ◽  
Optimum Thickness ◽  
Si Substrate ◽  
Barrier Effects ◽  
Pzt Thin Film ◽  
Different Temperatures ◽  
Gel Technique

ABSTRACTMgO thin films were deposited on Si(100) substrate with different temperatures from 500 °C to 800 °C and different e-beam powers from 25W to 100W using e-beam evaporation method. Pb(Zr0.53Ti0.47)O3(PZT) thin films were deposited on MgO/Si(100) substrates with different drying temperatures from 190 °C to 310 °C using sol-gel technique. If there were no buffer layer between the PZT thin film and Si substrate, the peaks corresponding to perovskite PZT phase were not observed. However the buffer layer were inserted between the PZT thin film and Si substrate, it was possible to fabricate perovskite PZT phase. The barrier effects of MgO thin film to the interdiffusion of Pb were investigated by AES study. Optimum thickness of MgO at which PZT/MgO/Si structure shows P-E hysteresis was calculated, and the hysteresis was tested for PZT/MgO/Si structures with different MgO thicknesses.

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

2005 ◽  
Vol 20 (3) ◽  
pp. 726-733 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Nickel Nitrate ◽  
Si Substrate ◽  
Pzt Thin Film ◽  
Pzt Films ◽  
Lanthanum Nickel ◽  
Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

Microstructure and Electrical Properties of R.F. Magnetron Sputtering Derived PZT Thin Films Deposited on PbO Buffer Layer

2005 ◽  
Vol 486-487 ◽  
pp. 626-629 ◽  
Author(s):  
Chul Ho Park ◽  
Young Gook Son
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Memory Window ◽  
Processing Temperature ◽  
Si Substrate ◽  
Pzt Thin Films ◽  
Maximum Value ◽  
Pzt Thin Film ◽  
Mfis Structure

The MFS and MFIS structures were prepared on the Si and PbO/Si substrate by the r.f. magnetron sputtering method. When the PbO buffer layer was inserted between the PZT thin film and Si substrate, the crystallization of the PZT thin films was considerably improved, and the processing temperature was lowered. Compared with the MFS structure, memory window values of the MFIS structure with the buffer layer were considerably improved. In particular, in the MFIS structure, the maximum value of the memory window is 2.0 V under the applied voltage of 9V for Pt/PZT (200 nm, 400ı)/PbO (80 nm)/Si structures with the PbO buffer layer deposited at the substrate temperature of 300ı.

Preparation and magnetic properties of the CoFe2O4 thin films on Si substrate by sol-gel technique

2005 ◽  
Vol 40 (16) ◽  
pp. 4169-4172 ◽  
Author(s):  
Nimai Chand Pramanik ◽  
Tatsuo FujiI ◽  
Makoto Nakanishi ◽  
Jun Takada
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Sol Gel ◽  
Si Substrate ◽  
Gel Technique

Development of Multi-Layered Composite PZT Thin Films for Active Sliders in Hard Disk Drives

2002 ◽  
Author(s):  
Norio Tagawa ◽  
Ken-ichi Kitamura ◽  
Atsunobu Mori
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Hard Disk Drives ◽  
Hard Disk ◽  
Layered Composite ◽  
The Novel ◽  
Disk Drives ◽  
Pzt Thin Films ◽  
Pzt Thin Film

This paper describes the development of novel PZT thin films for active sliders in hard disk drives. So far, it is common that single-layered thin films are used as micro-actuators for conventional PZT thin films such as sol-gel or sputtered thin films. In this study, however, the novel composite PZT thin films are developed. The feature is that sol-gel PZT thin film is deposited on sputtered PZT thin film fabricated on Pt/Ti bottom electrode. These multilayered composite PZT thin films are found to have the higher (111) preferred orientation as well as better P-E hysteresis loop characteristics than not only sol-gel PZT thin films but also sputtered PZT thin films. Furthermore, the piezoelectric strain constant d31 for the novel PZT thin films is identified to be 189 × 10−12m/V. This value is 2.0 times higher than that for conventional PZT thin films and it is found that the novel PZT thin films have good piezoelectric properties.

A HRTEM Study of Resistive Switching Behaviour in SiO2 Thin Films by Sol-Gel Process

2011 ◽  
Vol 687 ◽  
pp. 1-6 ◽  
Author(s):  
Ying Li ◽  
Gao Yang Zhao ◽  
Xiao Fei Zhou ◽  
Li Ning Pan ◽  
Yang Ren
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Amorphous Sio2 ◽  
Sio2 Thin Film ◽  
Different Temperatures ◽  
High Resolution Images ◽  
Sandwiched Structure

Amorphous SiO2 thin films were fabricated at different temperatures using sol-gel technique. The unipolar resistive switching behavior was observed in Cu/ SiO2/ ATO (SnO2: Sb) sandwiched structure when the SiO2 thin film annealed at 500°C. The average ratio of Roff /Ron is 102. We investigated the successful device using HRTEM and XPS. It shows that the Cu defuses into the SiO2 thin film and it forms CuSiO3 in the interface between SiO2 and ATO films according to the high resolution images.

Preparation of Pb(Zr0.52Ti0.48)O3 thin films on Pt/RuO2 double electrode by a new sol-gel route

1997 ◽  
Vol 12 (6) ◽  
pp. 1576-1581 ◽  
Author(s):  
Seung-Hyun Kim ◽  
Yong-Soo Choi ◽  
Chang-Eun Kim ◽  
Young-Jei Oh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Applied Voltage ◽  
Marked Improvement ◽  
Sol Gel ◽  
Gel Method ◽  
Pzt Thin Film ◽  
Double Electrode ◽  
Leakage Characteristics

Pb(Zr0.52Ti0.48)O3 (PZT) thin film on Pt/RuO2 double electrode was successfully prepared by using a new alkoxide-alkanolamine, sol-gel method. It was observed that the use of Pt/RuO2 double electrode reduced leakage current, resulting in a marked improvement in the leakage characteristics and more reliable capacitors. Typical P-E hysteresis behavior was observed even at low applied voltage of 5 V, manifesting greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5 V, showed stable behavior, and no degradation in polarization was observed up to 1011 cycles.

Preparation and Properties of Ni-Si-O Thin Film Prepared by Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 799-801
Author(s):  
Rong Juan Zhao ◽  
Yuan Hua Lin ◽  
Jing Nan Cai ◽  
Ce Wen Nan ◽  
Dan Xie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Dielectric Properties ◽  
Electrical Property ◽  
Electric Field ◽  
Sol Gel ◽  
Si Substrate ◽  
Gel Method ◽  
Sol Gel Method

Ni-Si-O thin films on Si substrate have been prepared by a sol-gel method. The microstructure and phase composition of the films were investigated by XRD, SEM, FTIR. The XRD results showed that the films are amorphous while annealed at 800oC for 10 min, the SEM imagines proved that the films are smooth and thickness is about 190 nm. Electrical property of the film indicated that the leakage current was as low as 10-6A/cm2 at an electric field of 1MV/cm. The dielectric properties of Ni-Si-O thin films can be improved as increasing the annealed temperature.

Annealing Treatment of Ferroelectric Pb (Zr0.52Ti0.48)O3 Thin Films with La0.5Sr0.5CoO3 Buffer Layer

2013 ◽  
Vol 739 ◽  
pp. 42-46 ◽  
Author(s):  
Jie Guo ◽  
Wei Liu ◽  
Shi Qing Man
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Annealing Temperature ◽  
Perovskite Phase ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
X Rays ◽  
Pzt Thin Film ◽  
Degree Of Crystallization

Lead zirconium titanate Pb (Zr0.52Ti0.48)O3(PZT) thin films have been deposited on Pt/Ti/Si substrate by rf-magnetron sputtering. X rays diffraction revealed that at 600°C the PZT thin film had crystallized into ABO3perovskite phase. Degree of crystallization depended on annealing temperature. The perovskite grains were textured predominantly along the (110) direction. The grain size was about 140 nm and almost unchanged under different annealing temperature. With the annealing temperature increasing, the degree of crystallization was improved. La0.5Sr0.5CoO3(LSCO) thin film was grown on Pt/Ti/Si as buffer layer. PZT with LSCO buffer layer was intensively (110) preferred orientation and the morphology of PZT thin film changed greatly.

Effects of Rare Earth Gd Doping on Ferroelectric Properties of PbZr0.52Ti0.48O3 Thin Films Prepared by Sol–Gel Methods

2007 ◽  
Vol 336-338 ◽  
pp. 21-23
Author(s):  
Qiu Sun ◽  
Ying Song ◽  
Fu Ping Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Thermal Annealing Process ◽  
Better Than

The Pb(Zr0.52Ti0.48)O3 thin films with 0-2at.%Gd dopants (denoted as PGZT) were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel technique and a rapid thermal annealing process. The structures of PGZT films were characterized and the ferroelectric properties such as P–V loop, C–V and I–V characteristics were investigated. Improved polarization (2Pr = 46.373 μC/cm2) and the low leakage current (J = 1.5×10-9 A/cm2 at the electric field of 400 kV/cm) were obtained in the PZT thin film with 1at.% Gd dopant, which was better than that of the pure PZT thin film (2Pr = 39.099 μC/cm2, J = 4.3×10-8A/cm2). With the Gd contents up to 2at.%, a decreased remanent polarization was found.

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