scholarly journals Relationship between Markov Chains and Radiation Defect Formation Processes by Ion Irradiation

2014 ◽  
Vol 9 (3) ◽  
Author(s):  
Anatoly Ivanovich Kupchishin ◽  
Evgeniy Vladimirovich Shmygalev ◽  
Tatyana Alexandrovna Shmygaleva ◽  
Almaz Binuruli Jorabayev
Keyword(s):  
Markov Chains ◽  
Radiation Defect ◽  
Defect Formation ◽  
Ion Irradiation ◽  
Formation Processes

scholarly journals Radiation defect formation processes as a method for activation of red phosphorus in the Trofimov-Gusarova reaction

ARKIVOC ◽  
2003 ◽  
Vol 2003 (13) ◽  
pp. 196-204 ◽  
Author(s):  
Boris Sukhov ◽  
Svetlana Malysheva ◽  
Tamara Vakul’skaya ◽  
Vladislav Tirsky ◽  
Evgueni Martynovich ◽  
...  
Keyword(s):  
Radiation Defect ◽  
Defect Formation ◽  
Formation Processes ◽  
Red Phosphorus

Study of defect formation processes under heavy ion irradiation of ZnCo2O4 nanowires

2021 ◽  
Vol 118 ◽  
pp. 111282
Author(s):  
A. Zikirina ◽  
K.K. Kadyrzhanov ◽  
I.E. Kenzhina ◽  
A.L. Kozlovskiy ◽  
M.V. Zdorovets
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Formation Processes ◽  
Heavy Ion Irradiation

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

Features of Defect Formation in Nanostructured Silicon under Ion Irradiation

2019 ◽  
Vol 53 (6) ◽  
pp. 800-805 ◽  
Author(s):  
A. V. Kozhemiako ◽  
A. P. Evseev ◽  
Yu. V. Balakshin ◽  
A. A. Shemukhin
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
Nanostructured Silicon
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