scholarly journals AlGaInAs/InP Based Five & Three Quantum Wells Mode Locked Laser Diodes: A Comparative Study

2020 ◽  
Vol 26 (5) ◽  
pp. 22-27
Author(s):  
Jehan Akbar ◽  
Muhammad Hanif ◽  
Muhammad Azhar Naeem ◽  
Kamran Abid

Comparison of performance of semiconductor mode-locked laser diodes fabricated using AlGaInAs/InP material containing 5 and 3 quantum wells (QWs) inside the active region is reported. The simulations and experimental results show that lasers containing five QWs materials produce larger beam divergence and temporally broader optical pulses. For improvement in the mode-locking of lasers and reducing the far-field pattern, the number of QWs inside the active region was decreased from five to three and a far-field decreasing layer along with a thick spacer layer were introduced in the n-cladding region of epitaxial material. Before growing the material, simulations were carried out to optimise the design. The lower optical confinement factor and higher gain saturation energy of three QWs based mode-locked lasers provide higher average and peak output power, reduced and symmetric far-field pattern, better radio frequency (RF) spectra, shorter optical pulses, and stable optimal mode-locking for a wide range of gain current and saturable absorber reverse voltage.

2006 ◽  
Author(s):  
Sungmin Hwang ◽  
Jongin Shim ◽  
Hanyoul Ryu ◽  
Kyung-ho Ha ◽  
Junghye Chae ◽  
...  

1999 ◽  
Vol 75 (19) ◽  
pp. 2960-2962 ◽  
Author(s):  
T. Takeuchi ◽  
T. Detchprohm ◽  
M. Iwaya ◽  
N. Hayashi ◽  
K. Isomura ◽  
...  

1991 ◽  
Author(s):  
Jose C. A. Freitas ◽  
Fernando D. Carvalho ◽  
Fernando C. Rodrigues ◽  
Manuel A. Abreu ◽  
Joao P. S. Marcal

2008 ◽  
Vol 104 (12) ◽  
pp. 124513 ◽  
Author(s):  
P. Gellie ◽  
W. Maineult ◽  
A. Andronico ◽  
G. Leo ◽  
C. Sirtori ◽  
...  

1992 ◽  
Vol 70 (2-3) ◽  
pp. 173-178 ◽  
Author(s):  
Ioanna Diamandi ◽  
Costas Mertzianidis ◽  
John N. Sahalos

The far-field pattern characteristics of line sources lying between the slabs of a four-dielectric substrate configuration are presented. The patterns are calculated for several cases of the substrate thickness as well as for several line-source locations. The considerations that are made give useful applications in remote sensing and microstrip antennas.


2011 ◽  
Vol 19 (27) ◽  
pp. 26752 ◽  
Author(s):  
Alessio Benedetti ◽  
Marco Centini ◽  
Mario Bertolotti ◽  
Concita Sibilia

2012 ◽  
Vol 10 ◽  
pp. 69-73 ◽  
Author(s):  
K. A. Yinusa ◽  
C. H. Schmidt ◽  
T. F. Eibert

Abstract. Near-field measurements are established techniques to obtain the far-field radiation pattern of an Antenna Under Test via near-field measurements and subsequent near-field far-field transformation. For measurements acquired in echoic environments, additional post-processing is required to eliminate the effects of multipath signals in the resulting far-field pattern. One of such methods models the measurement environment as a multiple source scenario whereby the collected near-field data is attributed to the AUT and some scattering centers in the vicinity of the AUT. In this way, the contributions of the AUT at the probe can be separated from those of the disturbers during the near-field far-field transformation if the disturber locations are known. In this paper, we present ways of modeling the scattering centers on equivalent surfaces such that echo suppression is possible with only partial or no information about the geometry of the scatterers.


Sign in / Sign up

Export Citation Format

Share Document