InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region
2019 ◽
Vol 58
(SC)
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pp. SCCD21
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Dagmar Gregušová
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Lajos Tóth
◽
Ondrej Pohorelec
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Stanislav Hasenöhrl
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Štefan Haščík
◽
...
2018 ◽
Vol 124
(16)
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pp. 165704
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Jaya Jha
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Bhanu B. Upadhyay
◽
Kuldeep Takhar
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Navneet Bhardwaj
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Swaroop Ganguly
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...
D. K. Panda
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G. Amarnath
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T. R. Lenka
Yu-Shyan Lin
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Chi-Che Lu
2020 ◽
Vol 67
(5)
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pp. 1939-1945
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Ching-Ting Lee
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Jia-Chen Guo
2013 ◽
Vol 52
(8S)
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pp. 08JN08
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Milan Ťapajna
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Ján Kuzmík
2018 ◽
Vol 8
(4)
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pp. 045014
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Ching-Ting Lee
◽
Chun-Chi Wang
Li-Hsien Huang
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Chien-liang Lu
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Ching-Ting Lee
2012 ◽
Vol 33
(7)
◽
pp. 997-999
◽
Han-Yin Liu
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Bo-Yi Chou
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Wei-Chou Hsu
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Ching-Sung Lee
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Chiu-Sheng Ho
2005 ◽
Vol 119
(1)
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pp. 36-40
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K. Balachander
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S. Arulkumaran
◽
T. Egawa
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Y. Sano
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K. Baskar