Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors
2018 ◽
Vol 8
(4)
◽
pp. 045014
◽
Ching-Ting Lee
◽
Chun-Chi Wang
2017 ◽
Vol 6
(10)
◽
pp. Q123-Q126
◽
Ching-Ting Lee
◽
Hsin-Ying Lee
◽
Jhe-Hao Chang
2015 ◽
Vol 62
(8)
◽
pp. 2481-2487
◽
Ching-Ting Lee
◽
Chang-Lin Yang
◽
Chun-Yen Tseng
◽
Jhe-Hao Chang
◽
Ray-Hua Horng
2018 ◽
Vol 124
(16)
◽
pp. 165704
◽
Jaya Jha
◽
Bhanu B. Upadhyay
◽
Kuldeep Takhar
◽
Navneet Bhardwaj
◽
Swaroop Ganguly
◽
...
D. K. Panda
◽
G. Amarnath
◽
T. R. Lenka
Yu-Shyan Lin
◽
Chi-Che Lu
2020 ◽
Vol 67
(5)
◽
pp. 1939-1945
◽
Ching-Ting Lee
◽
Jia-Chen Guo
2013 ◽
Vol 52
(8S)
◽
pp. 08JN08
◽
Milan Ťapajna
◽
Ján Kuzmík
2019 ◽
Vol 58
(SC)
◽
pp. SCCD21
◽
Dagmar Gregušová
◽
Lajos Tóth
◽
Ondrej Pohorelec
◽
Stanislav Hasenöhrl
◽
Štefan Haščík
◽
...
Li-Hsien Huang
◽
Chien-liang Lu
◽
Ching-Ting Lee