High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

2017 ◽  
Vol 10 (7) ◽  
pp. 072101 ◽  
Author(s):  
Zengcheng Li ◽  
Legong Liu ◽  
Yingnan Huang ◽  
Qian Sun ◽  
Meixin Feng ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 9 (5) ◽  
pp. 871 ◽  
Author(s):  
Abu Islam ◽  
Dong-Soo Shim ◽  
Jong-In Shim
Keyword(s):  
Potential Energy ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Energy Fluctuation ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (FPZ), the crystal quality, and the internal quantum efficiency increase with the sample’s indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, FPZ, and indium compositions.

Optical Properties of a NiO/Al-based Reflector for High-power Ultraviolet Light-emitting Diodes

2011 ◽  
Vol 58 (4(2)) ◽  
pp. 990-993 ◽  
Author(s):  
Dong Ju Chae ◽  
Dong Yoon Kim ◽  
Dong Ho Kim ◽  
Su Jin Kim ◽  
Tae Geun Kim
Keyword(s):  
Optical Properties ◽  
Ultraviolet Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes
Sign in / Sign up

Export Citation Format

Share Document