Electrically pumped room-temperature operation of GaAs1−xBixlaser diodes with low-temperature dependence of oscillation wavelength

2014 ◽  
Vol 7 (8) ◽  
pp. 082101 ◽  
Author(s):  
Takuma Fuyuki ◽  
Kenji Yoshida ◽  
Ryo Yoshioka ◽  
Masahiro Yoshimoto
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Electrically Pumped ◽  
Room Temperature Operation

Continuous room-temperature operation of electrically pumped quantum-dot microcylinder lasers

2001 ◽  
Vol 79 (12) ◽  
pp. 1766-1768 ◽  
Author(s):  
M. Arzberger ◽  
G. Böhm ◽  
M.-C. Amann ◽  
G. Abstreiter
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Electrically Pumped ◽  
Room Temperature Operation

Room‐temperature operation and threshold temperature dependence of LPE‐grown InxGa1−xAs homojunction lasers

1975 ◽  
Vol 46 (12) ◽  
pp. 5280-5282 ◽  
Author(s):  
R. E. Nahory ◽  
M. A. Pollack ◽  
D. W. Taylor ◽  
R. L. Fork ◽  
R. W. Dixon
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Threshold Temperature ◽  
Room Temperature Operation

TRANSITITON FROM A MAGNETIC TO A NONMAGNETIC STATE AS A FUNCTION OF PRESSURE IN MnSi

1993 ◽  
Vol 07 (01n03) ◽  
pp. 887-890 ◽  
Author(s):  
C. PFLEIDERER ◽  
R.H. FRIEND ◽  
G.G. LONZARICH ◽  
N.R. BERNHOEFT ◽  
J. FLOUQUET
Keyword(s):  
Low Temperature ◽  
Curie Temperature ◽  
Temperature Dependence ◽  
Fermi Liquid ◽  
Critical Pressure ◽  
Room Temperature ◽  
Temperature Form ◽  
Marginal Fermi Liquid

We report a study of the temperature dependence of the resistivity ρ(T) of MnSi over the range 20mK to room temperature at hydrostatic pressures of up to 20 kbar. The low temperature form of ρ(T) near the critical pressure Pc=15.5 kbar where the Curie temperature appears to vanish is interpreted in terms of a model of a Marginal Fermi Liquid.

Room-temperature operation of electrically pumped quantum-cascade microcylinder lasers

2002 ◽  
Vol 80 (22) ◽  
pp. 4094-4096 ◽  
Author(s):  
S. Anders ◽  
W. Schrenk ◽  
E. Gornik ◽  
G. Strasser
Keyword(s):  
Room Temperature ◽  
Quantum Cascade ◽  
Electrically Pumped ◽  
Room Temperature Operation

scholarly journals PDF calculations from STOE STADI P Ag Kα1 low- and high-temperature data

2014 ◽  
Vol 70 (a1) ◽  
pp. C1807-C1807
Author(s):  
Lothar Fink ◽  
Nicole Rademacher ◽  
Thomas Hartmann
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Temperature Data ◽  
Laboratory Setup ◽  
High Temperature Data ◽  
Chip Size ◽  
Peak Widths ◽  
Similar Peak

An impressive comparison of G(r) calculated with PDFgetX2(1) from data of Naphthalen taken at room temperature with a Stoe Stadi P powder diffractometer in Transmission mode equipped with a Ag-tube, a Ge(111)-monochromator for pure Ag-Kα1-radiation (0.5594 Å) as well as the Dectris MYTHEN 1K with1mm chip size and from synchrotron data, beamline X17A, NSLS Brookhaven with a wavelength of 0.1839 Å, yields amazingly similar peak widths for both experiment sites. To observe the temperature dependence of this resolution, the same laboratory setup with an additional Oxford Cryosystems Cobra or a Stoe furnace has been chosen to compare the signal width as a function of T. Low temperature data for these PDF calculation experiments has been taken from LaB6 as a crystalline standard and Naphthalene as well known organic phase. In addition high temperature G(r)-data from Ammonium Nitride will be demonstrated.

Room temperature operation of electrically pumped surface-emitting circular grating DBR laser

1992 ◽  
Vol 28 (11) ◽  
pp. 1037-1039 ◽  
Author(s):  
C. Wu ◽  
M. Svilans ◽  
T. Makino ◽  
J. Glinski ◽  
C. Maritan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electrically Pumped ◽  
Circular Grating ◽  
Room Temperature Operation

Infrared Spectroscopy of Intersitial Oxygen in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
Bernard Pajot ◽  
Bernard Cales
Keyword(s):  
Infrared Spectroscopy ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Liquid Helium ◽  
Isotope Shift ◽  
Room Temperature ◽  
Interstitial Oxygen ◽  
Helium Temperature ◽  
Temperature Spectrum ◽  
Weak Band

ABSTRACTA discussion of the isotope shift of the low temperature spectrum of the stretching mode of interstitial oxygen (Oi) in silicon introduces IR results showing the interaction of Oi with the silicon lattice. Evidence is given that the temperature dependence of a combination band observed at liquid helium temperature (LHT) at 1205.7 cm−1 is responsible for the room temperature (RT) band at 1227 cm−1 and that a weak band near 1013 cm−1 is an overtone of the 518 cm−1 band.

Interaction of Thin Ga Overlayer with InP(110): a Photoemission Study

1988 ◽  
Vol 143 ◽  
Author(s):  
R. Cao ◽  
K. Miyano ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Replacement Reaction ◽  
High Coverage ◽  
Fermi Level Pinning ◽  
Different Temperatures ◽  
Photoemission Study ◽  
Low Coverage

AbstractPhotoemission study of the Ga/InP(110) interface, in particular at the In 4d cooper minimum (CM) reveals that the growth of the deposited Ga on InP(110) at room temperature (RT) has two modes: chemisorption at low coverage and metallic island formation at high coverage, whereas the Ga overlayer is much more uniform at 80K low temperature (LT). A replacement reaction between Ga and InP is found to take place only underneath the Ga islands. Metal screening from the Ga islands is suggested to weaken the substrate bonds and enhance the replacement reaction. Distinct behavior of Fermi level pinning has been observed at different temperatures. This is correlated with the temperature dependence of the overlayer morphology as well as the interfacial reaction.

scholarly journals A63,65Cu and 127I Nuclear Quadrupole Resonance and X-Ray Crystallographic Study of a Low-Temperature Phase of the (2-picoline) Copper (I) Iodide Dimer

1992 ◽  
Vol 47 (1-2) ◽  
pp. 106-116
Author(s):  
Augustin Habiyakare ◽  
Edwin A. C. Lücken ◽  
Gerald Bernardinelli
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Membered Ring ◽  
Temperature Phase ◽  
X Ray ◽  
Crystallographic Study ◽  
Quadrupole Resonance ◽  
Nuclear Quadrupole ◽  
Low Temperature Phase

AbstractThe temperature-dependence of the 63Cu and 127I NQR spectra of bis(2-picoline) Copper(I) Iodide reveals the existence of a phase change at 250 K. An X-ray crystallographic study of the low-temperature phase reveals that the iodine-bridged dimeric structure, which was observed at room-temperature, is retained in the low temperature phase but that the bond-lengths and, particularly, the bond-angles of the central four-membered ring are considerably modified.

Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate

2009 ◽  
Vol 94 (6) ◽  
pp. 061124 ◽  
Author(s):  
J. B. Rodriguez ◽  
L. Cerutti ◽  
P. Grech ◽  
E. Tournié
Keyword(s):  
Silicon Substrate ◽  
Room Temperature ◽  
Electrically Pumped ◽  
Room Temperature Operation
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