Temperature and light-intensity dependence of upconverted photocurrent generation in shallow InAs quantum structures

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FV01 ◽  
Author(s):  
David M. Tex ◽  
Toshiyuki Ihara ◽  
Itaru Kamiya ◽  
Yoshihiko Kanemitsu
2010 ◽  
Vol 89 (3) ◽  
pp. 181-186 ◽  
Author(s):  
F. van Overmeire ◽  
F. Vanden Kerchove ◽  
W. P. Gomes ◽  
F. Cardon

1994 ◽  
Vol 28 (2-4) ◽  
pp. 417-422 ◽  
Author(s):  
S. Tabata ◽  
H. Ohnishi ◽  
E. Yagasaki ◽  
M. Ippommatsu ◽  
K. Domen

1989 ◽  
Vol 149 ◽  
Author(s):  
Liyou Yang ◽  
A. Catalano ◽  
R. R. Arya ◽  
M. S. Bennett ◽  
I. Balberg

ABSTRACTLarge simultaneous changes in ambipolar diffusion length and d.c. photoconductivity are observed with boron doping below 5ppm. We show that the observation can be explained successfully with a model for the doping effect, which is also consistent with earlier studies. The μτ products for both carriers as a function of doping are determined. The light intensity dependence of diffusion length and photoconductivity is also discussed.


2013 ◽  
Vol 15 (48) ◽  
pp. 20876 ◽  
Author(s):  
Ralf Dillert ◽  
Astrid Engel ◽  
Julia Große ◽  
Patrick Lindner ◽  
Detlef W. Bahnemann

2005 ◽  
Vol 87 (20) ◽  
pp. 203502 ◽  
Author(s):  
L. J. A. Koster ◽  
V. D. Mihailetchi ◽  
H. Xie ◽  
P. W. M. Blom

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