Temperature-dependent current–voltage characteristics and ultraviolet light detection of heterojunction diodes comprising n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films and p-type silicon substrates

2017 ◽  
Vol 56 (7S2) ◽  
pp. 07KD04 ◽  
Author(s):  
Abdelrahman Zkria ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Composite Films ◽  
Carbon Composite ◽  
Silicon Substrates ◽  
Temperature Dependent ◽  
Ultrananocrystalline Diamond ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Heterojunction Diodes ◽  
P Type ◽  
Hydrogenated Amorphous

Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping

2010 ◽  
Vol 49 (3) ◽  
pp. 031302 ◽  
Author(s):  
Shinya Ohmagari ◽  
Tsuyoshi Yoshitake ◽  
Akira Nagano ◽  
Ryota Ohtani ◽  
Hiroyuki Setoyama ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Composite Films ◽  
Boron Doping ◽  
Carbon Composite ◽  
Hydrogenated Amorphous Carbon ◽  
Ultrananocrystalline Diamond ◽  
P Type ◽  
Hydrogenated Amorphous

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

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