High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs

Author(s):  
Hideaki Matsuzaki ◽  
Kunihiro Arai ◽  
Koichi Maezawa ◽  
Jiro Osaka ◽  
Masafumi Yamamoto ◽  
...  
1992 ◽  
Vol 61 (14) ◽  
pp. 1685-1687 ◽  
Author(s):  
D. H. Chow ◽  
J. N. Schulman ◽  
E. Özbay ◽  
D. M. Bloom

1990 ◽  
Author(s):  
Elliott R. Brown ◽  
C. D. Parker ◽  
Arthur R. Calawa ◽  
M. J. Manfra ◽  
T. C. L. G. Sollner ◽  
...  

1991 ◽  
Vol 58 (3) ◽  
pp. 275-277 ◽  
Author(s):  
J. R. Söderström ◽  
E. R. Brown ◽  
C. D. Parker ◽  
L. J. Mahoney ◽  
J. Y. Yao ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Shukai Duan ◽  
Xiaofang Hu ◽  
Lidan Wang ◽  
Shiyong Gao

The resonant tunneling diodes (RTD) have found numerous applications in high-speed digital and analog circuits owing to its folded-back negative differential resistance (NDR) in current-voltage (I-V) characteristics and nanometer size. On account of the replacement of the state resistor in standard cell by an RTD, an RTD-based cellular neural/nonlinear network (RTD-CNN) can be obtained, in which the cell requires neither self-feedback nor a nonlinear output, thereby being more compact and versatile. This paper addresses the structure of RTD-CNN in detail and investigates its fault-tolerant properties in image processing taking horizontal line detection and edge extraction, for examples. A series of computer simulations demonstrates the promising fault-tolerant abilities of the RTD-CNN.


2009 ◽  
Vol 8 (4) ◽  
pp. 482-486 ◽  
Author(s):  
Sunkyu Choi ◽  
Yongsik Jeong ◽  
Jongwon Lee ◽  
Kyounghoon Yang

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