Influence of Annealing Atmosphere on the Epitaxial Graphene Growth on 3C-SiC (111)/Si (111)

2011 ◽  
Author(s):  
H. R. Aryal ◽  
K. Fujita ◽  
T. Egawa
Keyword(s):  
Epitaxial Graphene ◽  
Annealing Atmosphere ◽  
Graphene Growth

Epitaxial Graphene Growth and Shape Dynamics on Copper: Phase-Field Modeling and Experiments

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5692-5697 ◽  
Author(s):  
Esteban Meca ◽  
John Lowengrub ◽  
Hokwon Kim ◽  
Cecilia Mattevi ◽  
Vivek B. Shenoy
Keyword(s):  
Phase Field ◽  
Epitaxial Graphene ◽  
Phase Field Modeling ◽  
Graphene Growth ◽  
Shape Dynamics ◽  
Field Modeling ◽  
Copper Phase ◽  
Modeling And Experiments

Atomic behavior of carbon atoms on a Si removed 3C-SiC (111) surface during the early stage of epitaxial graphene growth

2012 ◽  
Vol 111 (10) ◽  
pp. 104324 ◽  
Author(s):  
Yubin Hwang ◽  
Eung-Kwan Lee ◽  
Heechae Choi ◽  
Kyung-Han Yun ◽  
Minho Lee ◽  
...  
Keyword(s):  
Early Stage ◽  
Epitaxial Graphene ◽  
Graphene Growth

Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)

2011 ◽  
Author(s):  
H. Kageshima ◽  
H. Hibino ◽  
H. Yamaguchi ◽  
M. Nagase
Keyword(s):  
Epitaxial Graphene ◽  
Graphene Growth ◽  
Initial Stage

Epitaxial Graphene Growth on α-SiC: Probing the Effect of Surface Orientation

2011 ◽  
Vol 3 (1) ◽  
pp. 49-54 ◽  
Author(s):  
N. Camara ◽  
B. Jouault ◽  
A. Caboni ◽  
A. Tiberj ◽  
P. Godignon ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Surface Orientation ◽  
Graphene Growth ◽  
Effect Of Surface

Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)

2014 ◽  
Vol 778-780 ◽  
pp. 1150-1153
Author(s):  
Hiroyuki Kageshima ◽  
Hiroki Hibino ◽  
Hiroshi Yamaguchi ◽  
Masao Nagase
Keyword(s):  
Surface Morphology ◽  
First Principles ◽  
Epitaxial Graphene ◽  
First Principles Calculation ◽  
Control Parameters ◽  
Graphene Growth ◽  
Initial Stage ◽  
The Stability

The energetics for the Si desorption and the C adsorption at a [11-20] step on SiC(0001) surface are studied using the first-principles calculation. It is found that the [11-20] step is stable and nonreactive. The stability of the step is thought to govern the surface morphology during the graphene formation. It is shown that the Si pressure and the temperature are the control parameters for the surface morphology and the graphene quality.

Epitaxial Graphene Growth on 3C–SiC(111)/AlN(0001)/Si(100)

2011 ◽  
Vol 14 (2) ◽  
pp. K13 ◽  
Author(s):  
Benjamin Hsia ◽  
Nicola Ferralis ◽  
Debbie G. Senesky ◽  
Albert P. Pisano ◽  
Carlo Carraro ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Graphene Growth

scholarly journals Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯)

2020 ◽  
Vol 257 (6) ◽  
pp. 1900718
Author(s):  
Yuchen Shi ◽  
Alexei A. Zakharov ◽  
Ivan Gueorguiev Ivanov ◽  
Gholamreza Yazdi ◽  
Mikael Syväjärvi ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Graphene Growth ◽  
Structured Surface
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