Epitaxial graphene growth on 4H-SiC (0001) with precisely controlled step- terrace surface by high temperature annealing above 2000 °C in UHV
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
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pp. 604-605
2003 ◽
Vol 386
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pp. 358-362
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1970 ◽
Vol 32
(6)
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pp. 1791-1797
2020 ◽
Vol 217
(14)
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pp. 1900868
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