Temperature Effect on Electrical Properties of HfInZnO Amorphous Oxide Thin Film Transistor

2012 ◽  
Author(s):  
J. S. Chang ◽  
J. H. Kim ◽  
D. W. Kwon ◽  
B. G. Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Temperature Effect ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Amorphous Oxide

Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

2011 ◽  
Vol 98 (6) ◽  
pp. 063502 ◽  
Author(s):  
Dae Woong Kwon ◽  
Jang Hyun Kim ◽  
Ji Soo Chang ◽  
Sang Wan Kim ◽  
Wandong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Effect ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Negative Bias ◽  
Amorphous Oxide

Light Effect on Negative Bias-Induced Instability of HfInZnO Amorphous Oxide Thin-Film Transistor

2011 ◽  
Vol 58 (4) ◽  
pp. 1127-1133 ◽  
Author(s):  
Dae Woong Kwon ◽  
Jang Hyun Kim ◽  
Ji Soo Chang ◽  
Sang Wan Kim ◽  
Wandong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Negative Bias ◽  
Light Effect ◽  
Amorphous Oxide

Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor

2010 ◽  
Vol 87 (10) ◽  
pp. 2019-2023 ◽  
Author(s):  
Ai Hua Chen ◽  
Hong Tao Cao ◽  
Hai Zhong Zhang ◽  
Ling Yan Liang ◽  
Zhi Min Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Layer Thickness ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Channel Layer ◽  
Indium Zinc Oxide

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

2008 ◽  
Vol 93 (19) ◽  
pp. 192107 ◽  
Author(s):  
Kenji Nomura ◽  
Toshio Kamiya ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Amorphous Oxide ◽  
Defect Passivation

scholarly journals Preparation of Li-Doped Indium-Zinc Oxide Thin-Film Transistor at Relatively Low Temperature Using Inkjet Printing Technology

2021 ◽  
Vol 59 (5) ◽  
pp. 314-320
Author(s):  
Woon-Seop Choi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Inkjet Printing ◽  
Printed Electronics ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Lithium Doping ◽  
Indium Zinc Oxide ◽  
Oxide Tfts

Inkjet printing is a very attractive technology for printed electronics and a potential alternative to current high cost and multi-chemical lithography processes, for display and other applications in the electronics field. Inkjet technology can be employed to fabricate organic light emitting diodes (OLED), quantum dots displays, and thin-film transistors (TFTs). Among potential applications, metal oxide TFTs, which have good properties and moderate processing methods, could be prepared using inkjet printing in the display industry. One effective method of improving their electrical properties is via doping. Lithium doping an oxide TFT is a very delicate process, and difficult to get good results. In this study, lithium was added to indium-zinc oxide (IZO) for inkjet printing to make oxide TFTs. Electrical properties, transfer and output curves, were achieved using inkjet printing even at the relatively low annealing temperature of 200 oC. After optimizing the inkjet process parameters, a 0.01 M Li-doped IZO TFT at 400 oC showed a mobility of 9.08 ± 0.7 cm2/V s, a sub-threshold slope of 0.62 V/dec, a threshold voltage of 2.66 V, and an on-to-off current ratio of 2.83 × 108. Improved bias stability and hysteresis behavior of the inkjet-printed IZO TFT were also achieved by lithium doping.

Photo-Insensitive Amorphous Oxide Thin-Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics

2014 ◽  
Vol 24 (23) ◽  
pp. 3482-3487 ◽  
Author(s):  
Seongpil Chang ◽  
Yun Seon Do ◽  
Jong-Woo Kim ◽  
Bo Yeon Hwang ◽  
Jinnil Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Transparent Electronics ◽  
Amorphous Oxide ◽  
Plasmonic Filter

Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor

2010 ◽  
Vol 97 (19) ◽  
pp. 193504 ◽  
Author(s):  
Dae Woong Kwon ◽  
Jang Hyun Kim ◽  
Ji Soo Chang ◽  
Sang Wan Kim ◽  
Min-Chul Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Charge Injection ◽  
Oxide Thin Film ◽  
Gate Electrode ◽  
Amorphous Oxide

Characteristics and Cleaning of Dry-Etching-Damaged Layer of Amorphous Oxide Thin-Film Transistor

2009 ◽  
Vol 12 (4) ◽  
pp. H95 ◽  
Author(s):  
Chang-Jung Kim ◽  
Jaechul Park ◽  
Sunil Kim ◽  
Ihun Song ◽  
Sangwook Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Dry Etching ◽  
Oxide Thin Film ◽  
Amorphous Oxide
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