Особенности излучательных свойств квантово-размерных частиц узкозонных полупроводников

For colloidal quantum-size particles (QP) of narrow-gap semiconductors, in contrast to quantum dots of wide-gap CdSe, in QP-PbS there take place an anomalous temperature dependence of the photoluminescence intensity. Also, in the planar microstructure containing QP-InSb, long-wavelength radiation (more than 3 µm) and photoconductivity (over 20 µm) was observed. Under certain conditions, the radiation intensity and photoconductivity demonstrate a resonance maximum. The effects were explained in the model of a one-dimensional quantum oscillator, which energy substantially depends on the effective mass of its quasi-free electron. This leads to competition between the manifestations of long-wave radiation and photoluminescence, and hence, to the anomalous temperature dependence of photoluminescence. It is assumed that QP-InSb in a planar microstructure can be sources and receivers of terahertz radiation, which properties depend on the crystal structure of quantum-sized particles determined by the parameters of their synthesis.

NEW APPROACHES TO INCREASING THE EFFICIENCY OF LIGHTEMITTING STRUCTURES BASED ON SILICON FOR OPTOELECTRONICS PURPOSES

New approaches to increasing the efficiency of dislocation radiation in silicon, which is promising for use in optoelectronics, are considered. The anomalous temperature dependence of the luminescence of dislocation structures in silicon formed by implantation of Si+ ions and modified by ion doping with boron at different doses is discussed.