COMPARISON OF MOBILITY IN THIN-FILM STRUCTURES WITH DIFFERENT DESIGN PARAMETERS

This study aims to found the conditions under which the same carrier distribution is achieved in thin-film structures with different design parameters, which is necessary for a correct comparison of the mobility in films. It was shown that the carrier distribution is controlled by a number of parameters which can be determined from the experimental dependences of the thin-film transistors.

A FLEXIBLE APPROACH TO SIMULATE ELECTROFORMING AND RESISTIVE SWITCHING IN METAL OXIDE MEMRISTIVE DEVICES CONTAINING FILAMENTS

An original model of resistive switching of metal oxide memristive devices is proposed. The efficiency and flexibility of the approach are demonstrated by the example of experimentally realized Au/oxide/TiN structures.

ELECTRON SPECTROSCOPIC CONTROL OF SURFACE CLEANING OF SILICON SUBTRATES

The work investigates the processes of purification - etching of the silicon surface with positive ions of cesium and subsequent annealing by total current spectroscopy.

SILICONE NANOWIRE SENSORS WITH DIELECTROPHORETIC CONTROL OF ANALYTE

This study aims to development of basic elements of silicon biosensors with an analyte concentration by an alternating electric field and investigate the behavior of viruses in devices.

MAIN LDE EFFECTS OF DEEP SUBMICRON MOS TRANSISTORS AND APPROACHES TO THEIR CONSIDERATION INTO SPICE MODELS

A review of the main, in terms of the influence on the electrophysical behavior of the MOS transistor, topology-dependent effects (LDE) was performed. Approaches to development test structures designed for their subsequent measurement, extraction of SPICE parameters and integration the results into a compact model are proposed.

INVESTIGATION OF BARRIER LAYERS FOR THE FORMATION OF COPPER VIAS

The paper investigates possible barrier layers (Ti/TiN/Ti, Ti/TiN/Ta, TaN/Ta) for forming vias to transistor structures made of copper.

LOW-TEMPERATURE ANNEALING OF LIGHT-EMITTING DEFECTS IN SILICON, IRRADIATED WITH SWIFT HEAVY IONS

The optical and structural properties of silicon irradiated with swift heavy Xe ions are investigated. In the photoluminescence (PL) spectra at low temperatures, a broad peak is observed in the range 1.3 - 1.5 μm. With an increase in the irradiation dose from 5 × 1010 to 1013 cm –2, the PL peak decreases and became narrows. Annealing at a temperature of 400° C leads to multiple signal amplification (up to 35 times).

LIGHT EMMITTING RECOMBINATION IN HETEROSTRUCTURES GE/SI WITH QUANTUM DOTS FORMED WITH USING ION BEAM RADIATION

This work devotes to a comparative study of the photoluminescence of Ge/Si epitaxial structures with quantum dots created with using ion beam irradiation and structures with Ge nanoclusters formed as a result of the implantation of Ge ions into silicon and subsequent annealing.

MEMORY DEVICE BASED ON CDTE-SIO2-SI HETEROSTRUCTURE

In this paper, an increase in the operational control of long-term information storage based on the CdTe-SiO2-Si heterostructure is considered, and the selectivity of a wide range of radiation in the range of 0.5-3.0 microns is shown.

SYNTHESIS AND CONDUCTING PROPERTIES OF SILICONCARBON NANOSTRUCTURES OBTAINED BY THE METHOD HIGH-TEMPERATURE PLASMA-CHEMICAL SYNTHESIS

A method for obtaining nanostructured carbon and silicon powder materials is considered. Shown are micrographs of the obtained nanocrystalline silicon. The temperature dependences of the conductivity of nanocrystalline silicon, fullerene-containing material, and a silicon-carbon compound obtained by plasma-chemical synthesis are presented.