Antibonding-Induced Anomalous Temperature Dependence of the Band Gap in Crystalline Ge2Sb2Te5

2021 ◽  
Vol 125 (35) ◽  
pp. 19537-19543
Author(s):  
Yongda Huang ◽  
Jian Zhou ◽  
Liyu Peng ◽  
Kaiqi Li ◽  
Stephen R. Elliott ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature

scholarly journals Anomalous Temperature Dependence of the Band Gap in Black Phosphorus

Nano Letters ◽  
2016 ◽  
Vol 16 (8) ◽  
pp. 5095-5101 ◽  
Author(s):  
Cesar E. P. Villegas ◽  
A. R. Rocha ◽  
Andrea Marini
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Black Phosphorus ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature

Anomalous temperature dependence of the band gap in AgGaSe2 and AgInSe2

1986 ◽  
Vol 59 (11) ◽  
pp. 745-746 ◽  
Author(s):  
V.A. Aliyev ◽  
G.D. Guseinov ◽  
F.I. Mamedov ◽  
L.M. Chapanova
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature

scholarly journals Temperature Dependence of the Density of States and the Change in the Band Gap in Semiconductors

2019 ◽  
Vol 9 (2) ◽  
pp. 4383-4386
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Anomalous Temperature Dependence ◽  
High Concentration ◽  
Anomalous Temperature ◽  
Density Spectrum ◽  
Absorption Of Light ◽  
Energy States ◽  
The Mathematical Model ◽  
Model Temperature

The temperature dependence of the density of energy states in semiconductors has been studied. Strong doping with impurities with deep levels broadens the conduction band and the valence band. This enhances the absorption of light below the red border. Consequently, a possible change in the width of the forbidden zone. In this paper, using the mathematical model, temperature dependence of the density spectrum of states, changes in the band gap are shown by analyzing the density spectrum of energy states, an explanation of the anomalous temperature dependence in acceleration semiconductors is proposed, the effects of doping with a high concentration on the band gap of the semiconductor are investigated. Explained absorption in the range of 0.6-0.9 eV for silicon

Anomalous Temperature Dependence in Metal–Black Phosphorus Contact

Nano Letters ◽  
2017 ◽  
Vol 18 (1) ◽  
pp. 26-31 ◽  
Author(s):  
Xuefei Li ◽  
Roberto Grassi ◽  
Sichao Li ◽  
Tiaoyang Li ◽  
Xiong Xiong ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Black Phosphorus ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature

Anomalous temperature dependence of flow stress in a Fe3Al alloy

2000 ◽  
Vol 42 (3) ◽  
pp. 271-276 ◽  
Author(s):  
Jin-Hwa Song ◽  
Tae Kwon Ha ◽  
Young Won Chang
Keyword(s):  
Flow Stress ◽  
Temperature Dependence ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature ◽  
Fe3al Alloy
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