Two Step Deposition of Ag Doped ZnO Film

Because of the different melting point, it is difficult to doped Ag element in ZnO film. Ag dopant can adjust the properties of ZnO materials. In this paper, we deposited Ag doped ZnO film using two step vapour evaporation method on c-plane sapphire substrate. The SEM image shows that the doped film was composed of small grain which compact in order and the Ag microwires was dispersed on the surface. The EDX graph proves that the Ag was indeed in the film. The XRD pattern reveals that the doped film has prefer orientation along the c-axis with wurtzite structure and the dopants have not effect the crystal quality.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF SOL–GEL DERIVED LEAD ZIRCONATE TITANATE FILMS

Effect of pre-heating temperature on the properties of Lead zirconate titanate (PZT) powders and films was investigated. PZT powders and films were prepared via a triol-based sol–gel route. The PZT powders prepared at various heating temperatures were characterized. The preheating temperature range of 200°C–400°C and annealing temperature of 600°C were chosen to make the films. AFM micrograph revealed the thin films with homogeneous, dense, and crack-free properties. The pre-heating temperature was found to have a significant effect on phase formation, prefer orientation, and dielectric properties of the films. Higher dielectric constant and dielectric loss were observed at higher pre-heating temperature. However, all films showed the dielectric loss less than 0.04.