АЛГОРИТМ АВТОМАТИЧЕСКОГО ПОСТРОЕНИЯ МАЛОСИГНАЛЬНОЙ МОДЕЛИ GAAS PHEMT- ТРАНЗИСТОРА И ЕГО РЕАЛИЗАЦИЯ В САПР

Показаны результаты разработки алгоритма построения малосигнальной модели GaAs pHEMT-транзистора. Алгоритм реализован в виде плагина для САПР СВЧ-устройств NI AWR Design Environment. Алгоритм представляет собой комбинацию различных методик построения малосигнальных моделей. Он позволяет получить модели СВЧ-транзисторов в автоматическом режиме непосредственно в САПР. Экспериментальные исследования показали хорошее совпадение модели, полученной прямой экстракцией, с результатами измерений. The paper highlights the results of developing a GaAs pHEMT small-signal modeling algorithm. The algorithm has been implemented in the microwave EDA NI AWR Design Environment. The algorithm is a combination of the different techniques for small-signal model extraction. It allows automatically getting the microwave transistor model directly in the EDA. Experimental studies have shown a good agreement between directly extracted model and measurements results.

Fuzzy Logic based Method for the Extraction of Extrinsic and Intrinsic Elements of Microwave Transistors

In this paper we propose a new method for the extraction of extrinsic and intrinsic elements for microwave transistors based on a fuzzy logic architecture. The proposed technique uses the experience of the designer in order to extract and optimize in a smart way only the electrical elements required for an accurate multibias scattering parameters prediction. We tested our model with a GaAs MESFET 6 x 120 um and a Al GaAs P-HEMT 6 x 15 um device. It has been demonstrated that the proposed method is more accurate than the conventional one, evaluated with the previous technologies. The global behavior of the transconductance (gm) and gate to source capacitance (Cgs) measured with this technique agrees with the physical properties of the above mentioned technologies. Another advantage of this method is that the conventional “Cold-FET” configurations (Vds=0V) are not required, which warrant the reliability of the microwave transistor. The methodology presented in this work can be used in the RF circuit design industry as a first step for an accurate transistor characterization.