Abstract
In this paper, we compare and describe the difference between the oscilloscope pulsing test and the WGFMU (Waveform Generator Fast Measurement Unit) in analyzing the defect of high resistance in DRAM main cell sample. The nanoprobe system has many constraints in the pulsing analysis utilizing the oscilloscope and pulse generator. There are certain cases where the system cannot support analysis when the saturation current is extremely minimal, such as the DRAM cell. In this paper, we address this constraint and propose a new way to conduct pulsing tests using the WGFMU's arbitrary linear waveform generator in the nanoprobe system.
Distributed Strain and Temperature Fast Measurement in Brillouin optical time-domain reflectometry based on double-sideband modulation