ATOMISTIC SIMULATION OF GATE EFFECT ON NANOSCALE INTRINSIC Si FIELD-EFFECT TRANSISTORS

We study the electrostatic and quantum transport properties of nanoscale double-gated Si -based field effect transistors within the framework of density functional theory combined with nonequilibrium Green's function approach. In our model device system, a Si slab is sandwiched between two insulator slabs and connected to two semi-infinite Si electrodes at its left and right ends. The effect of the double gates is taken into account by applying proper electrostatic boundary conditions and solving the Poisson equation self-consistently in the system. In the representation of localized SIESTA linear combination of atomic orbitals, the study is carried out with the help of Atomistix ToolKit (ATK) package together with an efficient multigrid Poisson solver. We find that the surface potential versus gate voltage curve shows similar characteristics as in conventional MOSFETs even for devices of 1 nm size, though the shape of the curve varies with the shrink of the system. In different working regimes of the devices, the electrostatic potential and the transmission spectrum are analyzed for an atomistic understanding of the device behavior.