Зависимость электрической проводимости никель-саленовых полимеров от напряжения затвор-исток в электрохимическом транзисторе

For the first time, polymeric forms of the complexes N,N′-bis(salicylidene)ethylenediaminonickel(II) and N,N′-bis(3-methoxysalicylidene)ethylenediaminonickel(II) have been investigated as functional materials for the conducting channels of organic electrochemical transistors. The dependence of the electrical conductivity of the polymers on the electrolyte anion-doping level has been established. The polymer film conductivity versus gate voltage curve parameters have been shown to depend on the molecular structure of the complex and the nature of the electrolyte solvent.

Modeling Asymmetry of a Current–Voltage Curve of a Novel MF-4SC/PTMSP Bilayer Membrane

A novel bilayer cation-exchange membrane—consisting of a thick layer of a pristine perfluorinated membrane MF-4SC (Russian equivalent of Nafion®-117) and a thinner layer (1 μm) of the membrane, on a base of glassy polymer of internal microporosity poly(1-trimethylsilyl-1-propyne) (PTMSP)—was prepared and characterized. Using the physicochemical characteristics of one-layer membranes MF-4SC and PTMSP in 0.05 M HCl and NaCl solutions, the asymmetric current–voltage curves (CVC) of the bilayer composite were described with good accuracy up to the overlimiting regime, based on the “fine-porous membrane” model. The MF-4SC/PTMSP bilayer composite has a significant asymmetry of CVC that is promising for using it in electromembrane devices, such as membrane detectors, sensors, and diodes.

ON THE CAPACITY OF SOLAR CELLS UNDER PARTIAL SHADING CONDITIONS

A photovoltaic system under uniform illumination conditions has only one global maximum power point, but this same panel in the case of partial shading conditions can have more maxima on the power-voltage curve. The motivation of this work are two-fold: to show nonlinear capacitance of solar cell and to propose a determination technique for partial shading condition. The author shows the results of measurements on a photovoltaic system under different lighting conditions. Shows the effect of capacitance on the shape of the response to excitation in the form of a load. The paper also shows which photovoltaic cell parameters influence the shape of the C-V curve.

Electronic Parameters of Diode Based Organometallic Semiconductor Dyes Centered Ruthenium Complexes with Active COOH Terminals

In this study, the ruthenium complexes, which is an organometallic N-3 and C-106 semiconductor material, was coated on indium tin oxide (ITO) by using the self-assembled technique and thus a diode containing an organometallic interface was produced. The effects of this interface on the electronic parameters of the diode were investigated. It is aimed to improve the heterogeneity problem of the inorganic/organic interface by chemically bonding these materials from COOH active parts to the ITO surface. In order to understand how the electronic parameters of the diode change with this modification, the Schottky diode electrical characterization approach has been used. The charge mobility of the diode was calculated using the current density-voltage curve (J–V) characteristic with Space Charge Limited Current (SCLC) technique. When the electrical field is applied to the diode, it can be said that the ruthenium complexes molecules create an electrical dipole and the tunneling current is transferred to the anode contact ITO through the ruthenium molecule through the charge carrier, thus contributing to the hole injection. The morphology of these interface modifications was examined by Atomic Force Microscope (AFM) and surface potential energy by KelvinProbe Force Microscope (KPFM). To investigate local conductivity of bare ITO and modified ITO surface, Scanning Spreading Resistance Microscopy (SSRM) that is a conductive AFM analyzing technique were performed by applying voltage to the conductive tip and to the sample. According to the results of this work the diode containing N-3 material shows the best performance in terms of charge injection to the ITO due to possess the lowest barrier height Φb as 0.43 eV.

Identification of low-voltage connection relation in distribution platform based on similarity of voltage curve and grey correlation degree of entropy weight

The correct low-voltage connection relationship in distribution area is of great significance to the safe operation and efficient management of power grid. As there are many reconstruction projects in the low-voltage platform area, the assets change frequently, and the interconnection perception ability of the low-voltage platform area is weak, which brings great difficulties to the identification of the user connection relationship. Traditional identification methods are heavy and inefficient. This paper proposes a method based on trend similarity and distance measure to identify low-voltage connection relation in distribution platform area. Firstly, Pearson correlation coefficient and discrete Fréchet distance are calculated to measure the trend similarity of voltage curve, and abnormal users are found out. GIS is used to search for adjacent stations, and finally, the correct station area of users is determined by analyzing the entropy weight grey correlation degree. The applicability and correctness of the proposed algorithm are verified by the application results of an example.

Research on the SOH Prediction Based on the Feature Points of Incremental Capacity Curve

The accurate prediction of the state of health (SOH) is an important basis for ensuring the normal operation of the lithium-ion battery (LIB). The accurate SOH can extend the life-span, ensure safety, and improve the performance of LIBs. The charging voltage curve and incremental capacity (IC) curve of the LIB in different SOH are obtained through experiments. The location parameters of each feature point on IC curve are closely related to battery aging, to characterize the SOH of the LIB with the location of feature points. To solve the difficulty in identifying feature points due to the oscillation in solving IC curves with a traditional numerical analytic method, the piecewise polynomial fitting method is adopted to smooth IC. To discuss the law between the location change of all feature points on the IC curve and the capacity attenuation, a capacity prediction regression model is established after the dimensionality reduction of the coordinate data of feature points on the IC curve with the principal component analysis method. The proposed method can rapidly estimate the online SOH of LIBs during the charging process of electric vehicles and the results show the maximum error is 0.63AH (3.15%).

Electrical characteristics of silicon differential photoreceivers

The volt-ampere curve of silicon differential photodiodes were measured. It was found that the current-voltage curve of the photodiodes of the main and additional channels had a similar shape, without revealing a significant dependence on the implantation dose of the additional channel. The main parameters of the equivalent circuits of photodiodes are determined. In the reverse branch, the dominant impact was exerted by the surface leakage conductivity with a differential resistance of about 10 GΩ. Measurements from minus 60 °C to 60 °C showed that when using amplifiers with an input impedance of about 103 Ω, differential photoreceivers can be successfully used as selective short-wavelength and two-color ones.

The Effects of Optical Power of Semiconductor Laser on the Characteristics of Si-diode in an Exposed Device

In this paper, we experimentally studied the effects of optical power of semiconductor laser on the electrical properties of silicon diode of an exposed device. The experimental results showed that the laser diode light of different optical powers (2, 3, and 4 mW) had effects on the silicon diode that are somewhat similar to those of thermal treatment. A shift in the current-voltage curve to the left side was also noticed, which led to a non-linear decrease of the barrier voltage of the diode by the effect of laser light. We also reveal a decrease by 344.8 nA/mW in the reverse saturation current of the silicon diode as a result of exposure to laser light. The forward resistance of the silicon diode decreased with increased incident optical power. The value of the maximum current of diode increased by 0.5 A/W with increasing the optical power incident on the diode.

Electrochemical Properties of a Lithium-Impregnated Metal Foam Anode (LIMFA Fecral) for Molten Salt Thermal Batteries

Although numerous cathode materials with excellent properties have been developed for use in molten salt thermal batteries, similar progress is yet to be made with anode materials. Herein, a high-performance lithium-impregnated metal foam anode (LIMFA) is fabricated by impregnating molten lithium into a gold-coated iron–chrome–aluminum (FeCrAl) foam at 400°C. A test cell employing the LIMFA FeCrAl anode exhibited a specific capacity of 2,627 As·g−1. For comparison, a cell with a conventional Li(Si) anode was also discharged, demonstrating a specific capacity of 982 As·g−1. This significant improvement in performance can be attributed to the large amount (18 wt.%) of lithium incorporated into the FeCrAl foam and the ability of the FeCrAl foam to absorb and immobilize molten lithium without adopting a cup system. For thermal batteries without a cup, the LIMFA FeCrAl provides the highest-reported specific capacity and a flat discharge voltage curve of molten lithium. After cell discharge, the FeCrAl foam exhibited no lithium leakage, surface damage, or structural collapse. Given these advantageous properties, in addition to its high specific capacity, LIMFA FeCrAl is expected to aid the development of thermal batteries with enhanced performance.