Data Pattern Aware Reliability Enhancement Scheme for 3D Solid-State Drives

3D charge-trap (CT) NAND flash-based SSD has been used widely for its large capacity, low cost per bit, and high endurance. One-shot program (OSP) scheme, as a variation of incremental step pulse programming (ISPP) scheme, has been employed to program data for CT flash, whose program unit is the Word-Line (WL) instead of the page. The existing program optimization schemes either make trade-offs among program latency and reliability by adjusting the program step voltage on demand; or remap the most error-prone cell states to others by re-encoding programmed data. However, the data pattern, which represents the ratio of 1s in data values, has not been thoroughly studied. In this paper, we observe that most small files do not contain uniform 1s and 0s among these common file types (i.e., image, audio, text, executable file), leading to programming WL cells in different states unevenly. Some cell states dominate over the WL, while others are not. Based on this observation, we propose a flexible reliability enhancement scheme based on the OSP scheme. This scheme programs the cells into different states with varied , i.e., these cells in one state, whose number is the largest in one WL, are programmed with a fine-grained (namely slow write). In contrast, the minority are programmed with a coarse-grained (namely fast write). So the reliability is improved due to averaging the major enhanced cells with the minor degraded cells without program latency overhead. A series of experiments have been conducted, and the results indicate that the proposed scheme achieves 34% read performance improvement and 16% lifetime elongation on average.